SILICON WAFER HEAT TREATMENT METHOD

SILICON WAFER HEAT TREATMENT METHOD

PROBLEM TO BE SOLVED: To provide a silicon wafer heat treatment method that can suppress the level of oxygen and roughness on the surface of a silicon wafer after RTP (rapid thermal processing), greatly reduce void defects, such as COP (crystal originated particles), made on the surface layer of the...

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Bibliographische Detailangaben
Hauptverfasser: SENDA TAKESHI, ARAKI KOJI, AOKI TATSUHIKO, TOYODA EIJI, ISOGAI HIROMICHI, SUDO HARUO
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a silicon wafer heat treatment method that can suppress the level of oxygen and roughness on the surface of a silicon wafer after RTP (rapid thermal processing), greatly reduce void defects, such as COP (crystal originated particles), made on the surface layer of the wafer, and form high-density oxygen precipitate on the bulk portion of the wafer.SOLUTION: The method includes: providing inert gas for the surface W1 of a wafer W and oxygen-bearing gas for the reverse side W2 of the wafer W; rapidly raising the temperature to an achievable maximum temperature T1 ranging from 1300°C to 1400°C; rapidly lowering the temperature after keeping the achievable maximum temperature T1; switching the inert gas to oxygen-bearing gas when the temperature reaches T2 ranging from 700°C to 900°C during the process of lowering the temperature and providing the oxygen-bearing gas for the surface W1 of the wafer W; and diffusing oxygen in the oxygen-bearing gas inwards to the surface W1 of the wafer W.