ZINC OXIDE SINTERED COMPACT, METHOD FOR MANUFACTURING THE SAME, SPUTTERING TARGET, AND METHOD FOR MANUFACTURING TRANSPARENT FILM

PROBLEM TO BE SOLVED: To provide a zinc oxide sintered compact from which a sputtering target of good shape accuracy can be obtained even not perform heat treatment or the like after processing, and from which a transparent film in which stable discharge is continuously possible also by a DC sputter...

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Bibliographische Detailangaben
Hauptverfasser:	IIGUSA HITOSHI, MESHIDA MASAMI, SHIBUTAMI TETSUO, UCHIUMI KENTARO, KURAMOCHI TOSHIHITO
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a zinc oxide sintered compact from which a sputtering target of good shape accuracy can be obtained even not perform heat treatment or the like after processing, and from which a transparent film in which stable discharge is continuously possible also by a DC sputtering method and which has suitable insulation can be obtained.SOLUTION: When a zinc oxide powder in which the metal content other than zinc is less than 0.1% by weight, the BET specific surface area is 2-20 m/g, and the powder bulk density is 0.5-1.8 g/cmis fabricated, and calcinated, the calcination is performed such that the sintering temperature is 900-1,250°C, and a gas flow parameter is at least 8,000 under the inert atmosphere in which oxygen is at most 10 vol.%. Thereby, the zinc oxide sintered compact in which the metal content other than zinc is less than 0.1 wt.% and the volume resistivity is at most 1.0×10Ωcm at 25°C is manufactured, used as a sputtering target, and the transparency film is manufactured by a DC sputtering method.