ETCHING METHOD OF SILICON NITRIDE

PROBLEM TO BE SOLVED: To provide a method for etching silicon nitride capable of selectively etching silicon nitride without etching silicon oxide, and moreover capable of stably etching for a long period.SOLUTION: A method for etching silicon nitride containing an etchant containing phosphoric acid...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TAKAHASHI FUMIHARU, HARA YASUSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!