LIGHT-EMITTING ELEMENT

PROBLEM TO BE SOLVED: To provide a light-emitting element which can increase optical output from the chip surface while minimizing increase in forward voltage.SOLUTION: The light-emitting element comprises: a light-emitting layer; a first conductivity type layer provided on the light-emitting layer;...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TANAKA AKIRA, MATSUNAGA NORIHIKO, KONDO KATSUAKI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator TANAKA AKIRA
MATSUNAGA NORIHIKO
KONDO KATSUAKI
description PROBLEM TO BE SOLVED: To provide a light-emitting element which can increase optical output from the chip surface while minimizing increase in forward voltage.SOLUTION: The light-emitting element comprises: a light-emitting layer; a first conductivity type layer provided on the light-emitting layer; a first electrode provided on the first conductivity type layer; a second conductivity type layer provided under the light-emitting layer and having a thickness of t1(μm); a current block layer provided in contact with a partial region of the surface of the second conductivity type layer on the side opposite to the light-emitting layer while projecting the outer edge by a length of x1(μm) from the outer edge of the first electrode; and a second electrode which comes into contact with the surface of the current block layer on the side opposite to the second conductivity type layer and a region of the surface of the second conductivity type layer not coming into contact with the current block layer and capable of reflecting light emitted from the light-emitting layer. Assuming the sum of thicknesses of the first conductivity type layer, the light-emitting layer and the second conductivity type layer is t2(μm), following formula is satisfied.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2011249510A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2011249510A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2011249510A3</originalsourceid><addsrcrecordid>eNrjZBDz8XT3CNF19fUMCfH0c1dw9XH1dfUL4WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgaGhkYmlqaGBo7GRCkCAPTtH5M</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>LIGHT-EMITTING ELEMENT</title><source>esp@cenet</source><creator>TANAKA AKIRA ; MATSUNAGA NORIHIKO ; KONDO KATSUAKI</creator><creatorcontrib>TANAKA AKIRA ; MATSUNAGA NORIHIKO ; KONDO KATSUAKI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a light-emitting element which can increase optical output from the chip surface while minimizing increase in forward voltage.SOLUTION: The light-emitting element comprises: a light-emitting layer; a first conductivity type layer provided on the light-emitting layer; a first electrode provided on the first conductivity type layer; a second conductivity type layer provided under the light-emitting layer and having a thickness of t1(μm); a current block layer provided in contact with a partial region of the surface of the second conductivity type layer on the side opposite to the light-emitting layer while projecting the outer edge by a length of x1(μm) from the outer edge of the first electrode; and a second electrode which comes into contact with the surface of the current block layer on the side opposite to the second conductivity type layer and a region of the surface of the second conductivity type layer not coming into contact with the current block layer and capable of reflecting light emitted from the light-emitting layer. Assuming the sum of thicknesses of the first conductivity type layer, the light-emitting layer and the second conductivity type layer is t2(μm), following formula is satisfied.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20111208&amp;DB=EPODOC&amp;CC=JP&amp;NR=2011249510A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20111208&amp;DB=EPODOC&amp;CC=JP&amp;NR=2011249510A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TANAKA AKIRA</creatorcontrib><creatorcontrib>MATSUNAGA NORIHIKO</creatorcontrib><creatorcontrib>KONDO KATSUAKI</creatorcontrib><title>LIGHT-EMITTING ELEMENT</title><description>PROBLEM TO BE SOLVED: To provide a light-emitting element which can increase optical output from the chip surface while minimizing increase in forward voltage.SOLUTION: The light-emitting element comprises: a light-emitting layer; a first conductivity type layer provided on the light-emitting layer; a first electrode provided on the first conductivity type layer; a second conductivity type layer provided under the light-emitting layer and having a thickness of t1(μm); a current block layer provided in contact with a partial region of the surface of the second conductivity type layer on the side opposite to the light-emitting layer while projecting the outer edge by a length of x1(μm) from the outer edge of the first electrode; and a second electrode which comes into contact with the surface of the current block layer on the side opposite to the second conductivity type layer and a region of the surface of the second conductivity type layer not coming into contact with the current block layer and capable of reflecting light emitted from the light-emitting layer. Assuming the sum of thicknesses of the first conductivity type layer, the light-emitting layer and the second conductivity type layer is t2(μm), following formula is satisfied.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBDz8XT3CNF19fUMCfH0c1dw9XH1dfUL4WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgaGhkYmlqaGBo7GRCkCAPTtH5M</recordid><startdate>20111208</startdate><enddate>20111208</enddate><creator>TANAKA AKIRA</creator><creator>MATSUNAGA NORIHIKO</creator><creator>KONDO KATSUAKI</creator><scope>EVB</scope></search><sort><creationdate>20111208</creationdate><title>LIGHT-EMITTING ELEMENT</title><author>TANAKA AKIRA ; MATSUNAGA NORIHIKO ; KONDO KATSUAKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2011249510A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TANAKA AKIRA</creatorcontrib><creatorcontrib>MATSUNAGA NORIHIKO</creatorcontrib><creatorcontrib>KONDO KATSUAKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TANAKA AKIRA</au><au>MATSUNAGA NORIHIKO</au><au>KONDO KATSUAKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LIGHT-EMITTING ELEMENT</title><date>2011-12-08</date><risdate>2011</risdate><abstract>PROBLEM TO BE SOLVED: To provide a light-emitting element which can increase optical output from the chip surface while minimizing increase in forward voltage.SOLUTION: The light-emitting element comprises: a light-emitting layer; a first conductivity type layer provided on the light-emitting layer; a first electrode provided on the first conductivity type layer; a second conductivity type layer provided under the light-emitting layer and having a thickness of t1(μm); a current block layer provided in contact with a partial region of the surface of the second conductivity type layer on the side opposite to the light-emitting layer while projecting the outer edge by a length of x1(μm) from the outer edge of the first electrode; and a second electrode which comes into contact with the surface of the current block layer on the side opposite to the second conductivity type layer and a region of the surface of the second conductivity type layer not coming into contact with the current block layer and capable of reflecting light emitted from the light-emitting layer. Assuming the sum of thicknesses of the first conductivity type layer, the light-emitting layer and the second conductivity type layer is t2(μm), following formula is satisfied.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JP2011249510A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title LIGHT-EMITTING ELEMENT
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T09%3A56%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TANAKA%20AKIRA&rft.date=2011-12-08&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2011249510A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true