LIGHT-EMITTING ELEMENT
PROBLEM TO BE SOLVED: To provide a light-emitting element which can increase optical output from the chip surface while minimizing increase in forward voltage.SOLUTION: The light-emitting element comprises: a light-emitting layer; a first conductivity type layer provided on the light-emitting layer;...
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creator | TANAKA AKIRA MATSUNAGA NORIHIKO KONDO KATSUAKI |
description | PROBLEM TO BE SOLVED: To provide a light-emitting element which can increase optical output from the chip surface while minimizing increase in forward voltage.SOLUTION: The light-emitting element comprises: a light-emitting layer; a first conductivity type layer provided on the light-emitting layer; a first electrode provided on the first conductivity type layer; a second conductivity type layer provided under the light-emitting layer and having a thickness of t1(μm); a current block layer provided in contact with a partial region of the surface of the second conductivity type layer on the side opposite to the light-emitting layer while projecting the outer edge by a length of x1(μm) from the outer edge of the first electrode; and a second electrode which comes into contact with the surface of the current block layer on the side opposite to the second conductivity type layer and a region of the surface of the second conductivity type layer not coming into contact with the current block layer and capable of reflecting light emitted from the light-emitting layer. Assuming the sum of thicknesses of the first conductivity type layer, the light-emitting layer and the second conductivity type layer is t2(μm), following formula is satisfied. |
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Assuming the sum of thicknesses of the first conductivity type layer, the light-emitting layer and the second conductivity type layer is t2(μm), following formula is satisfied.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20111208&DB=EPODOC&CC=JP&NR=2011249510A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20111208&DB=EPODOC&CC=JP&NR=2011249510A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TANAKA AKIRA</creatorcontrib><creatorcontrib>MATSUNAGA NORIHIKO</creatorcontrib><creatorcontrib>KONDO KATSUAKI</creatorcontrib><title>LIGHT-EMITTING ELEMENT</title><description>PROBLEM TO BE SOLVED: To provide a light-emitting element which can increase optical output from the chip surface while minimizing increase in forward voltage.SOLUTION: The light-emitting element comprises: a light-emitting layer; a first conductivity type layer provided on the light-emitting layer; a first electrode provided on the first conductivity type layer; a second conductivity type layer provided under the light-emitting layer and having a thickness of t1(μm); a current block layer provided in contact with a partial region of the surface of the second conductivity type layer on the side opposite to the light-emitting layer while projecting the outer edge by a length of x1(μm) from the outer edge of the first electrode; and a second electrode which comes into contact with the surface of the current block layer on the side opposite to the second conductivity type layer and a region of the surface of the second conductivity type layer not coming into contact with the current block layer and capable of reflecting light emitted from the light-emitting layer. 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Assuming the sum of thicknesses of the first conductivity type layer, the light-emitting layer and the second conductivity type layer is t2(μm), following formula is satisfied.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | LIGHT-EMITTING ELEMENT |
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