SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device which is capable of preventing reduction in Schottky junction area and is manufactured at low cost with simple processes.SOLUTION: A semiconductor layer 1, which is a drift layer containing comparatively low concentration n-type impurity, is pr...

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Bibliographische Detailangaben

1. Verfasser:	NAKAKI YOSHIYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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