PROTECTION OF ACTIVE LAYERS OF MEMORY CELLS DURING PROCESSING OF OTHER ELEMENTS

PROBLEM TO BE SOLVED: To properly remove surface oxidation from selected conductive bodies, while avoiding damaging a memory structure.SOLUTION: A method of fabricating an electronic structure comprises providing a conductive layer (102), providing a dielectric layer (100) over the conductive layer,...

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Hauptverfasser:	STEVEN AVANZINO, IGOR SOKOLIK, SUZETTE K PANGRLE, NICHOLAS H TRIPSAS, JEFFREY A SHIELDS
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	STEVEN AVANZINO IGOR SOKOLIK SUZETTE K PANGRLE NICHOLAS H TRIPSAS JEFFREY A SHIELDS
description	PROBLEM TO BE SOLVED: To properly remove surface oxidation from selected conductive bodies, while avoiding damaging a memory structure.SOLUTION: A method of fabricating an electronic structure comprises providing a conductive layer (102), providing a dielectric layer (100) over the conductive layer, providing first and second openings (104, 106) penetrating the dielectric layer (100), providing first and second conductive bodies (108, 110) in the first and second openings (104, 106) respectively and in contact with the conductive layer (102), providing a memory structure (126) over the first conductive body (108), providing a protective element (134) over the memory structure (126), and performing processing on the second conductive body (110).
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2011233916A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2011233916A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2011233916A3</originalsourceid><addsrcrecordid>eNrjZPAPCPIPcXUO8fT3U_B3U3AEssJcFXwcI12DgkECvq6-_kGRCs6uPj7BCi6hQZ5-7gpALc6uwcEgJlCFf4iHa5CCq4-rr6tfSDAPA2taYk5xKi-U5mZQcnMNcfbQTS3Ij08tLkhMTs1LLYn3CjAyMDQ0Mja2NDRzNCZKEQCrpi9F</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PROTECTION OF ACTIVE LAYERS OF MEMORY CELLS DURING PROCESSING OF OTHER ELEMENTS</title><source>esp@cenet</source><creator>STEVEN AVANZINO ; IGOR SOKOLIK ; SUZETTE K PANGRLE ; NICHOLAS H TRIPSAS ; JEFFREY A SHIELDS</creator><creatorcontrib>STEVEN AVANZINO ; IGOR SOKOLIK ; SUZETTE K PANGRLE ; NICHOLAS H TRIPSAS ; JEFFREY A SHIELDS</creatorcontrib><description>PROBLEM TO BE SOLVED: To properly remove surface oxidation from selected conductive bodies, while avoiding damaging a memory structure.SOLUTION: A method of fabricating an electronic structure comprises providing a conductive layer (102), providing a dielectric layer (100) over the conductive layer, providing first and second openings (104, 106) penetrating the dielectric layer (100), providing first and second conductive bodies (108, 110) in the first and second openings (104, 106) respectively and in contact with the conductive layer (102), providing a memory structure (126) over the first conductive body (108), providing a protective element (134) over the memory structure (126), and performing processing on the second conductive body (110).</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20111117&DB=EPODOC&CC=JP&NR=2011233916A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20111117&DB=EPODOC&CC=JP&NR=2011233916A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>STEVEN AVANZINO</creatorcontrib><creatorcontrib>IGOR SOKOLIK</creatorcontrib><creatorcontrib>SUZETTE K PANGRLE</creatorcontrib><creatorcontrib>NICHOLAS H TRIPSAS</creatorcontrib><creatorcontrib>JEFFREY A SHIELDS</creatorcontrib><title>PROTECTION OF ACTIVE LAYERS OF MEMORY CELLS DURING PROCESSING OF OTHER ELEMENTS</title><description>PROBLEM TO BE SOLVED: To properly remove surface oxidation from selected conductive bodies, while avoiding damaging a memory structure.SOLUTION: A method of fabricating an electronic structure comprises providing a conductive layer (102), providing a dielectric layer (100) over the conductive layer, providing first and second openings (104, 106) penetrating the dielectric layer (100), providing first and second conductive bodies (108, 110) in the first and second openings (104, 106) respectively and in contact with the conductive layer (102), providing a memory structure (126) over the first conductive body (108), providing a protective element (134) over the memory structure (126), and performing processing on the second conductive body (110).</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAPCPIPcXUO8fT3U_B3U3AEssJcFXwcI12DgkECvq6-_kGRCs6uPj7BCi6hQZ5-7gpALc6uwcEgJlCFf4iHa5CCq4-rr6tfSDAPA2taYk5xKi-U5mZQcnMNcfbQTS3Ij08tLkhMTs1LLYn3CjAyMDQ0Mja2NDRzNCZKEQCrpi9F</recordid><startdate>20111117</startdate><enddate>20111117</enddate><creator>STEVEN AVANZINO</creator><creator>IGOR SOKOLIK</creator><creator>SUZETTE K PANGRLE</creator><creator>NICHOLAS H TRIPSAS</creator><creator>JEFFREY A SHIELDS</creator><scope>EVB</scope></search><sort><creationdate>20111117</creationdate><title>PROTECTION OF ACTIVE LAYERS OF MEMORY CELLS DURING PROCESSING OF OTHER ELEMENTS</title><author>STEVEN AVANZINO ; IGOR SOKOLIK ; SUZETTE K PANGRLE ; NICHOLAS H TRIPSAS ; JEFFREY A SHIELDS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2011233916A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>STEVEN AVANZINO</creatorcontrib><creatorcontrib>IGOR SOKOLIK</creatorcontrib><creatorcontrib>SUZETTE K PANGRLE</creatorcontrib><creatorcontrib>NICHOLAS H TRIPSAS</creatorcontrib><creatorcontrib>JEFFREY A SHIELDS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>STEVEN AVANZINO</au><au>IGOR SOKOLIK</au><au>SUZETTE K PANGRLE</au><au>NICHOLAS H TRIPSAS</au><au>JEFFREY A SHIELDS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PROTECTION OF ACTIVE LAYERS OF MEMORY CELLS DURING PROCESSING OF OTHER ELEMENTS</title><date>2011-11-17</date><risdate>2011</risdate><abstract>PROBLEM TO BE SOLVED: To properly remove surface oxidation from selected conductive bodies, while avoiding damaging a memory structure.SOLUTION: A method of fabricating an electronic structure comprises providing a conductive layer (102), providing a dielectric layer (100) over the conductive layer, providing first and second openings (104, 106) penetrating the dielectric layer (100), providing first and second conductive bodies (108, 110) in the first and second openings (104, 106) respectively and in contact with the conductive layer (102), providing a memory structure (126) over the first conductive body (108), providing a protective element (134) over the memory structure (126), and performing processing on the second conductive body (110).</abstract><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	PROTECTION OF ACTIVE LAYERS OF MEMORY CELLS DURING PROCESSING OF OTHER ELEMENTS
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T18%3A51%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=STEVEN%20AVANZINO&rft.date=2011-11-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2011233916A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true