SILICON CARBIDE SUBSTRATE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a silicon carbide substrate capable of preventing a void from forming in the silicon carbide substrate having a plurality of single crystal layers and a manufacturing method of the same.SOLUTION: A sublimation prevention layer 31, covering a first region R1 of a principal plane M2 of a material substrate 22, is formed. A first and second single crystal layers 11 and 12 are arranged on the material substrate 22 so that a gap GP placed between a first and second side faces S1 and S2 is disposed on the sublimation prevention layer 31. By heating the material substrate 22 and the first and second single crystal layers 11 and 12, silicon carbide sublimated from a second region R2 of the principal plane M2 is recrystallized on each of a first rear face B1 of the first single crystal layer 11 and a second rear face B2 of the second single crystal layer 12, so that a base substrate 30, jointed to each of the first and second rear faces B1 and B2, is formed.