PHOTOMASK AND METHOD FOR MANUFACTURING PHOTOMASK
PROBLEM TO BE SOLVED: To suppress the variation in dimension of a circuit pattern (element) due to exposure.SOLUTION: The photomask has a desired circuit pattern formed through processes of at least drawing, etching, resist peeling, etc. on a photomask blank having light-shielding function films 21&...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | HIROSE TOMOKAZU |
| description | PROBLEM TO BE SOLVED: To suppress the variation in dimension of a circuit pattern (element) due to exposure.SOLUTION: The photomask has a desired circuit pattern formed through processes of at least drawing, etching, resist peeling, etc. on a photomask blank having light-shielding function films 21' and 22' and a resist film 23 formed on a light-transmissive substrate 10'. The circuit pattern is formed by performing the etching process using inert gas in an etching atmosphere or an etchant not containing sulfur and is cleaned using a cleaning liquid other than sulfuric acid solution during cleaning for resist peeling and/or the final cleaning, whereby the variation in dimension of the circuit pattern is suppressed. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2011221250A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2011221250A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2011221250A3</originalsourceid><addsrcrecordid>eNrjZDAI8PAP8fd1DPZWcPRzUfB1DfHwd1Fw8w9S8HX0C3VzdA4JDfL0c1eAK-NhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhoZGRoZGpgaOxkQpAgCG_ibG</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PHOTOMASK AND METHOD FOR MANUFACTURING PHOTOMASK</title><source>esp@cenet</source><creator>HIROSE TOMOKAZU</creator><creatorcontrib>HIROSE TOMOKAZU</creatorcontrib><description>PROBLEM TO BE SOLVED: To suppress the variation in dimension of a circuit pattern (element) due to exposure.SOLUTION: The photomask has a desired circuit pattern formed through processes of at least drawing, etching, resist peeling, etc. on a photomask blank having light-shielding function films 21' and 22' and a resist film 23 formed on a light-transmissive substrate 10'. The circuit pattern is formed by performing the etching process using inert gas in an etching atmosphere or an etchant not containing sulfur and is cleaned using a cleaning liquid other than sulfuric acid solution during cleaning for resist peeling and/or the final cleaning, whereby the variation in dimension of the circuit pattern is suppressed.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20111104&DB=EPODOC&CC=JP&NR=2011221250A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20111104&DB=EPODOC&CC=JP&NR=2011221250A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HIROSE TOMOKAZU</creatorcontrib><title>PHOTOMASK AND METHOD FOR MANUFACTURING PHOTOMASK</title><description>PROBLEM TO BE SOLVED: To suppress the variation in dimension of a circuit pattern (element) due to exposure.SOLUTION: The photomask has a desired circuit pattern formed through processes of at least drawing, etching, resist peeling, etc. on a photomask blank having light-shielding function films 21' and 22' and a resist film 23 formed on a light-transmissive substrate 10'. The circuit pattern is formed by performing the etching process using inert gas in an etching atmosphere or an etchant not containing sulfur and is cleaned using a cleaning liquid other than sulfuric acid solution during cleaning for resist peeling and/or the final cleaning, whereby the variation in dimension of the circuit pattern is suppressed.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAI8PAP8fd1DPZWcPRzUfB1DfHwd1Fw8w9S8HX0C3VzdA4JDfL0c1eAK-NhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhoZGRoZGpgaOxkQpAgCG_ibG</recordid><startdate>20111104</startdate><enddate>20111104</enddate><creator>HIROSE TOMOKAZU</creator><scope>EVB</scope></search><sort><creationdate>20111104</creationdate><title>PHOTOMASK AND METHOD FOR MANUFACTURING PHOTOMASK</title><author>HIROSE TOMOKAZU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2011221250A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HIROSE TOMOKAZU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HIROSE TOMOKAZU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PHOTOMASK AND METHOD FOR MANUFACTURING PHOTOMASK</title><date>2011-11-04</date><risdate>2011</risdate><abstract>PROBLEM TO BE SOLVED: To suppress the variation in dimension of a circuit pattern (element) due to exposure.SOLUTION: The photomask has a desired circuit pattern formed through processes of at least drawing, etching, resist peeling, etc. on a photomask blank having light-shielding function films 21' and 22' and a resist film 23 formed on a light-transmissive substrate 10'. The circuit pattern is formed by performing the etching process using inert gas in an etching atmosphere or an etchant not containing sulfur and is cleaned using a cleaning liquid other than sulfuric acid solution during cleaning for resist peeling and/or the final cleaning, whereby the variation in dimension of the circuit pattern is suppressed.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JP2011221250A |
| source | esp@cenet |
| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | PHOTOMASK AND METHOD FOR MANUFACTURING PHOTOMASK |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T02%3A22%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HIROSE%20TOMOKAZU&rft.date=2011-11-04&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2011221250A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |