METHOD OF MANUFACTURING WAFER

PROBLEM TO BE SOLVED: To facilitate manufacturing a wafer of an appropriate shape.SOLUTION: A method of manufacturing the wafer includes the steps of: correspondingly storing, in an oxide film thickness information memory 24c, accumulation use hours of a polishing pad 15 and an oxide film thickness...

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Hauptverfasser: KOSASA KAZUAKI, SATOMURA KENJI, KOSASA HIROSHI
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creator KOSASA KAZUAKI
SATOMURA KENJI
KOSASA HIROSHI
description PROBLEM TO BE SOLVED: To facilitate manufacturing a wafer of an appropriate shape.SOLUTION: A method of manufacturing the wafer includes the steps of: correspondingly storing, in an oxide film thickness information memory 24c, accumulation use hours of a polishing pad 15 and an oxide film thickness to be formed on each region of a wafer W to control a polishing amount of polishing by the polishing pad for the accumulation use hours to a target polishing amount for polishing from a first shape into a second shape and acquiring the accumulation use hours (step S2); detecting the oxide film thickness corresponding to the acquired accumulation used hours (step S3); forming the oxide film of the detected oxide film thickness on each region of the wafer W (step S5); and polishing the wafer with the oxide film formed therein by the polishing pad 15 (step S6).
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subjects BASIC ELECTRIC ELEMENTS
DRESSING OR CONDITIONING OF ABRADING SURFACES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
SEMICONDUCTOR DEVICES
TRANSPORTING
title METHOD OF MANUFACTURING WAFER
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