COMPOUND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a compound semiconductor device which has a high threshold voltage and superior normally-off characteristics.SOLUTION: The compound semiconductor device includes a compound semiconductor layer 2, in which a two-dimensional carrier gas layer 211 is formed, the compoun...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KANEKO NOBUO, ICHIMARU KEIICHI, NIISATO MASAHIRO, IWAGAMI SHINICHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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