SYSTEM AND METHOD FOR INSPECTING SURFACE OF SEMICONDUCTOR WAFER

PROBLEM TO BE SOLVED: To provide a technology inspecting shortly and easily for linear unevenness such as a saw mark on the surface of a semiconductor wafer and of reducing influence of a vibration to an inspection.SOLUTION: A light source device 2 irradiates the whole region of the surface of a sem...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	WADA KATSUO, KATAOKA TOSHIHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS TESTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a technology inspecting shortly and easily for linear unevenness such as a saw mark on the surface of a semiconductor wafer and of reducing influence of a vibration to an inspection.SOLUTION: A light source device 2 irradiates the whole region of the surface of a semiconductor wafer W is irradiated with light diagonally, and the whole body of the semiconductor wafer W is photographed by a CCD camera 4. Thus, the intensity of the reflected light or the scattered light of the irradiated light is detected from each point of the semiconductor wafer W. Unevenness such as a saw mark formed on the surface of the semiconductor wafer W is detected, or the size thereof is measured based on the two-dimensional intensity distribution of light obtained.