ELECTRIC OPTICAL DEVICE, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC DEVICE
PROBLEM TO BE SOLVED: To suppress a light leakage current by improving light blocking performance while having a transistor which can be formed in a self-aligning manner in an electric optical device such as a liquid crystal display device. SOLUTION: The electric optical device includes: a transisto...
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| creator | EGAMI TAKASHI |
| description | PROBLEM TO BE SOLVED: To suppress a light leakage current by improving light blocking performance while having a transistor which can be formed in a self-aligning manner in an electric optical device such as a liquid crystal display device. SOLUTION: The electric optical device includes: a transistor (30) that includes a semiconductor layer (1a) having a source region (1d) connected to a data line (6a), a drain region (1e) connected to a pixel electrode (9a), and a channel region (1a'), and a gate electrode (31); an upper side light blocking film (710) that is formed to be wider than the gate electrode on the upper layer side of the gate electrode and that is connected to the gate electrode via a first contact hole (820) formed at an upper side insulating film (41); and a lower side light blocking film (11) that is formed at the lower layer side of the semiconductor layer and connected to the upper side light blocking film via a second contact hole (810). COPYRIGHT: (C)2011,JPO&INPIT |
| format | Patent |
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SOLUTION: The electric optical device includes: a transistor (30) that includes a semiconductor layer (1a) having a source region (1d) connected to a data line (6a), a drain region (1e) connected to a pixel electrode (9a), and a channel region (1a'), and a gate electrode (31); an upper side light blocking film (710) that is formed to be wider than the gate electrode on the upper layer side of the gate electrode and that is connected to the gate electrode via a first contact hole (820) formed at an upper side insulating film (41); and a lower side light blocking film (11) that is formed at the lower layer side of the semiconductor layer and connected to the upper side light blocking film via a second contact hole (810). 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| subjects | ADVERTISING CRYPTOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DISPLAY DISPLAYING EDUCATION FREQUENCY-CHANGING LABELS OR NAME-PLATES NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEALS SIGNS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
| title | ELECTRIC OPTICAL DEVICE, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC DEVICE |
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