SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
PROBLEM TO BE SOLVED: To solve the problem with a conventional device, wherein an input/output circuit tends to be broken due to insufficient surge current flowing from an electrode pad to an ESD protection circuit. SOLUTION: The electrode pad 22 is provided on an upper layer of a circuit block 21 o...
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creator | NARUSE TATSUYA SEGAWA KEIMEI KUMASHIRO YOSHIFUMI MATSUI TORU HIROFUJI MASANORI |
description | PROBLEM TO BE SOLVED: To solve the problem with a conventional device, wherein an input/output circuit tends to be broken due to insufficient surge current flowing from an electrode pad to an ESD protection circuit. SOLUTION: The electrode pad 22 is provided on an upper layer of a circuit block 21 of a semiconductor integrated circuit device 201. Branch points A204 and B212 are provided to a connection wiring of an electrode pad 202, an internal circuit 208, and an ESD protection circuit 206 as well as a connection wiring of an electrode pad 213, the internal circuit 208, and the ESD protection circuit 206, respectively. The branch points A204 and B212 are arranged at positions nearer to the ESD protection circuit 206 than those of the electrode pads 202 and 213. COPYRIGHT: (C)2011,JPO&INPIT |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2011171680A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2011171680A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2011171680A3</originalsourceid><addsrcrecordid>eNrjZFAPdvX1dPb3cwl1DvEPUvD0C3F1D3IMcXVRcPYMcg71DFFwcQ3zdHblYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBoaGhuaGZhYGjsZEKQIAP-QkYQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE</title><source>esp@cenet</source><creator>NARUSE TATSUYA ; SEGAWA KEIMEI ; KUMASHIRO YOSHIFUMI ; MATSUI TORU ; HIROFUJI MASANORI</creator><creatorcontrib>NARUSE TATSUYA ; SEGAWA KEIMEI ; KUMASHIRO YOSHIFUMI ; MATSUI TORU ; HIROFUJI MASANORI</creatorcontrib><description>PROBLEM TO BE SOLVED: To solve the problem with a conventional device, wherein an input/output circuit tends to be broken due to insufficient surge current flowing from an electrode pad to an ESD protection circuit. SOLUTION: The electrode pad 22 is provided on an upper layer of a circuit block 21 of a semiconductor integrated circuit device 201. Branch points A204 and B212 are provided to a connection wiring of an electrode pad 202, an internal circuit 208, and an ESD protection circuit 206 as well as a connection wiring of an electrode pad 213, the internal circuit 208, and the ESD protection circuit 206, respectively. The branch points A204 and B212 are arranged at positions nearer to the ESD protection circuit 206 than those of the electrode pads 202 and 213. COPYRIGHT: (C)2011,JPO&INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110901&DB=EPODOC&CC=JP&NR=2011171680A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110901&DB=EPODOC&CC=JP&NR=2011171680A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NARUSE TATSUYA</creatorcontrib><creatorcontrib>SEGAWA KEIMEI</creatorcontrib><creatorcontrib>KUMASHIRO YOSHIFUMI</creatorcontrib><creatorcontrib>MATSUI TORU</creatorcontrib><creatorcontrib>HIROFUJI MASANORI</creatorcontrib><title>SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE</title><description>PROBLEM TO BE SOLVED: To solve the problem with a conventional device, wherein an input/output circuit tends to be broken due to insufficient surge current flowing from an electrode pad to an ESD protection circuit. SOLUTION: The electrode pad 22 is provided on an upper layer of a circuit block 21 of a semiconductor integrated circuit device 201. Branch points A204 and B212 are provided to a connection wiring of an electrode pad 202, an internal circuit 208, and an ESD protection circuit 206 as well as a connection wiring of an electrode pad 213, the internal circuit 208, and the ESD protection circuit 206, respectively. The branch points A204 and B212 are arranged at positions nearer to the ESD protection circuit 206 than those of the electrode pads 202 and 213. COPYRIGHT: (C)2011,JPO&INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAPdvX1dPb3cwl1DvEPUvD0C3F1D3IMcXVRcPYMcg71DFFwcQ3zdHblYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBoaGhuaGZhYGjsZEKQIAP-QkYQ</recordid><startdate>20110901</startdate><enddate>20110901</enddate><creator>NARUSE TATSUYA</creator><creator>SEGAWA KEIMEI</creator><creator>KUMASHIRO YOSHIFUMI</creator><creator>MATSUI TORU</creator><creator>HIROFUJI MASANORI</creator><scope>EVB</scope></search><sort><creationdate>20110901</creationdate><title>SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE</title><author>NARUSE TATSUYA ; SEGAWA KEIMEI ; KUMASHIRO YOSHIFUMI ; MATSUI TORU ; HIROFUJI MASANORI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2011171680A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NARUSE TATSUYA</creatorcontrib><creatorcontrib>SEGAWA KEIMEI</creatorcontrib><creatorcontrib>KUMASHIRO YOSHIFUMI</creatorcontrib><creatorcontrib>MATSUI TORU</creatorcontrib><creatorcontrib>HIROFUJI MASANORI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NARUSE TATSUYA</au><au>SEGAWA KEIMEI</au><au>KUMASHIRO YOSHIFUMI</au><au>MATSUI TORU</au><au>HIROFUJI MASANORI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE</title><date>2011-09-01</date><risdate>2011</risdate><abstract>PROBLEM TO BE SOLVED: To solve the problem with a conventional device, wherein an input/output circuit tends to be broken due to insufficient surge current flowing from an electrode pad to an ESD protection circuit. SOLUTION: The electrode pad 22 is provided on an upper layer of a circuit block 21 of a semiconductor integrated circuit device 201. Branch points A204 and B212 are provided to a connection wiring of an electrode pad 202, an internal circuit 208, and an ESD protection circuit 206 as well as a connection wiring of an electrode pad 213, the internal circuit 208, and the ESD protection circuit 206, respectively. The branch points A204 and B212 are arranged at positions nearer to the ESD protection circuit 206 than those of the electrode pads 202 and 213. COPYRIGHT: (C)2011,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
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