METHOD FOR PRODUCING GALLIUM OXIDE SINGLE CRYSTAL AND GALLIUM OXIDE SINGLE CRYSTAL
PROBLEM TO BE SOLVED: To provide a method for producing a gallium oxide single crystal, by which a gallium oxide single oxide having a larger size is mass-produced efficiently by a batch production system comprising bringing a seed crystal into contact with a melt and growing a crystal by using an e...
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| creator | NISHIGUCHI KENGO AIDA HIDEO KOYAMA KOJI |
| description | PROBLEM TO BE SOLVED: To provide a method for producing a gallium oxide single crystal, by which a gallium oxide single oxide having a larger size is mass-produced efficiently by a batch production system comprising bringing a seed crystal into contact with a melt and growing a crystal by using an existing growth furnace without remodeling the furnace. SOLUTION: In the method for producing a gallium oxide single crystal, the gallium oxide single crystal 13 is produced through at least a density-enhancing process of highly enhancing the density of a raw material containing gallium oxide, a melting process of obtaining one batch of melt 2 by melting the raw material treated in the density-enhancing process, in a crucible, and a crystal growth process of growing the gallium oxide single crystal 13 from the melt 2 by bringing the seed crystal 10 into contact with the melt 2. COPYRIGHT: (C)2011,JPO&INPIT |
| format | Patent |
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SOLUTION: In the method for producing a gallium oxide single crystal, the gallium oxide single crystal 13 is produced through at least a density-enhancing process of highly enhancing the density of a raw material containing gallium oxide, a melting process of obtaining one batch of melt 2 by melting the raw material treated in the density-enhancing process, in a crucible, and a crystal growth process of growing the gallium oxide single crystal 13 from the melt 2 by bringing the seed crystal 10 into contact with the melt 2. 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SOLUTION: In the method for producing a gallium oxide single crystal, the gallium oxide single crystal 13 is produced through at least a density-enhancing process of highly enhancing the density of a raw material containing gallium oxide, a melting process of obtaining one batch of melt 2 by melting the raw material treated in the density-enhancing process, in a crucible, and a crystal growth process of growing the gallium oxide single crystal 13 from the melt 2 by bringing the seed crystal 10 into contact with the melt 2. 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SOLUTION: In the method for producing a gallium oxide single crystal, the gallium oxide single crystal 13 is produced through at least a density-enhancing process of highly enhancing the density of a raw material containing gallium oxide, a melting process of obtaining one batch of melt 2 by melting the raw material treated in the density-enhancing process, in a crucible, and a crystal growth process of growing the gallium oxide single crystal 13 from the melt 2 by bringing the seed crystal 10 into contact with the melt 2. COPYRIGHT: (C)2011,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | METHOD FOR PRODUCING GALLIUM OXIDE SINGLE CRYSTAL AND GALLIUM OXIDE SINGLE CRYSTAL |
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