SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device, along with a method of manufacturing the same, for reducing a leakage current of a three dimensionally formed transistor or thyristor for DRAM. SOLUTION: The device includes a silicon pillar 12 that is formed almost perpendicularly to a main s...

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1. Verfasser: KUJIRAI YUTAKA
Format: Patent
Sprache:eng
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