SURFACE STRUCTURE OF CRYSTAL SILICON BATTERY AND METHOD FOR MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a surface structure of a crystal silicon battery, and a method for manufacturing the same. SOLUTION: The surface structure of the crystal silicon battery includes a body having a surface fine structure and a rear surface fine structure. Also, the roughness coefficien...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LIN CHING-YING, LIN MIEN-LIANG, TU CHING-HAO
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator LIN CHING-YING
LIN MIEN-LIANG
TU CHING-HAO
description PROBLEM TO BE SOLVED: To provide a surface structure of a crystal silicon battery, and a method for manufacturing the same. SOLUTION: The surface structure of the crystal silicon battery includes a body having a surface fine structure and a rear surface fine structure. Also, the roughness coefficient of the surface fine structure is larger than that of the rear surface fine structure, and the surface form of the surface fine structure includes a plurality of cone shaped bodies, and the surface form of the rear surface fine structure includes a plurality of arc shaped bodies or a plurality of polygons. COPYRIGHT: (C)2011,JPO&INPIT
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2011086902A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2011086902A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2011086902A3</originalsourceid><addsrcrecordid>eNqNjLEKwjAUALs4iPoPD3chrSA6PtPERJpEXl6GTqVInEQL9f8xgx_gdMvdLSuKiTRKBZEpSU6kIGiQ1EfGDqLtrAwezsisqAf0LTjFJrSgA4FDn0pcKusvwKZc0Kl1tXiMzzlvflxVW61Yml2e3kOep_GeX_kzXG-NqGtxPJxEg_u_pC9ENzAa</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SURFACE STRUCTURE OF CRYSTAL SILICON BATTERY AND METHOD FOR MANUFACTURING THE SAME</title><source>esp@cenet</source><creator>LIN CHING-YING ; LIN MIEN-LIANG ; TU CHING-HAO</creator><creatorcontrib>LIN CHING-YING ; LIN MIEN-LIANG ; TU CHING-HAO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a surface structure of a crystal silicon battery, and a method for manufacturing the same. SOLUTION: The surface structure of the crystal silicon battery includes a body having a surface fine structure and a rear surface fine structure. Also, the roughness coefficient of the surface fine structure is larger than that of the rear surface fine structure, and the surface form of the surface fine structure includes a plurality of cone shaped bodies, and the surface form of the rear surface fine structure includes a plurality of arc shaped bodies or a plurality of polygons. COPYRIGHT: (C)2011,JPO&amp;INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110428&amp;DB=EPODOC&amp;CC=JP&amp;NR=2011086902A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110428&amp;DB=EPODOC&amp;CC=JP&amp;NR=2011086902A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIN CHING-YING</creatorcontrib><creatorcontrib>LIN MIEN-LIANG</creatorcontrib><creatorcontrib>TU CHING-HAO</creatorcontrib><title>SURFACE STRUCTURE OF CRYSTAL SILICON BATTERY AND METHOD FOR MANUFACTURING THE SAME</title><description>PROBLEM TO BE SOLVED: To provide a surface structure of a crystal silicon battery, and a method for manufacturing the same. SOLUTION: The surface structure of the crystal silicon battery includes a body having a surface fine structure and a rear surface fine structure. Also, the roughness coefficient of the surface fine structure is larger than that of the rear surface fine structure, and the surface form of the surface fine structure includes a plurality of cone shaped bodies, and the surface form of the rear surface fine structure includes a plurality of arc shaped bodies or a plurality of polygons. COPYRIGHT: (C)2011,JPO&amp;INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLEKwjAUALs4iPoPD3chrSA6PtPERJpEXl6GTqVInEQL9f8xgx_gdMvdLSuKiTRKBZEpSU6kIGiQ1EfGDqLtrAwezsisqAf0LTjFJrSgA4FDn0pcKusvwKZc0Kl1tXiMzzlvflxVW61Yml2e3kOep_GeX_kzXG-NqGtxPJxEg_u_pC9ENzAa</recordid><startdate>20110428</startdate><enddate>20110428</enddate><creator>LIN CHING-YING</creator><creator>LIN MIEN-LIANG</creator><creator>TU CHING-HAO</creator><scope>EVB</scope></search><sort><creationdate>20110428</creationdate><title>SURFACE STRUCTURE OF CRYSTAL SILICON BATTERY AND METHOD FOR MANUFACTURING THE SAME</title><author>LIN CHING-YING ; LIN MIEN-LIANG ; TU CHING-HAO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2011086902A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LIN CHING-YING</creatorcontrib><creatorcontrib>LIN MIEN-LIANG</creatorcontrib><creatorcontrib>TU CHING-HAO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIN CHING-YING</au><au>LIN MIEN-LIANG</au><au>TU CHING-HAO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SURFACE STRUCTURE OF CRYSTAL SILICON BATTERY AND METHOD FOR MANUFACTURING THE SAME</title><date>2011-04-28</date><risdate>2011</risdate><abstract>PROBLEM TO BE SOLVED: To provide a surface structure of a crystal silicon battery, and a method for manufacturing the same. SOLUTION: The surface structure of the crystal silicon battery includes a body having a surface fine structure and a rear surface fine structure. Also, the roughness coefficient of the surface fine structure is larger than that of the rear surface fine structure, and the surface form of the surface fine structure includes a plurality of cone shaped bodies, and the surface form of the rear surface fine structure includes a plurality of arc shaped bodies or a plurality of polygons. COPYRIGHT: (C)2011,JPO&amp;INPIT</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JP2011086902A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SURFACE STRUCTURE OF CRYSTAL SILICON BATTERY AND METHOD FOR MANUFACTURING THE SAME
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T05%3A42%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LIN%20CHING-YING&rft.date=2011-04-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2011086902A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true