STORAGE ELEMENT AND OPERATING METHOD OF STORAGE ELEMENT
PROBLEM TO BE SOLVED: To provide a storage element configured such that it can be easily manufactured with high density. SOLUTION: The storage element has memory cells each composed of a resistance change element 10 having a recording layer between two electrodes 1 and 4 configured such that the rec...
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| creator | TSUSHIMA TOMOHITO ARAYA KATSUHISA OTSUKA WATARU YATSUNO HIDEO NARISAWA KOSUKE |
| description | PROBLEM TO BE SOLVED: To provide a storage element configured such that it can be easily manufactured with high density. SOLUTION: The storage element has memory cells each composed of a resistance change element 10 having a recording layer between two electrodes 1 and 4 configured such that the recording layer reversibly changes in resistance value by application of potentials of the different polarities to the two electrodes 1 and 4, wherein the recording layer has a laminate structure comprising an ion source layer 3 containing one or more kinds of elements selected out of Ag, Cu and Zn and one or more kind of elements selected out of S, Se and Te, and a high-resistance layer 2 formed of an insulator or semiconductor. A plurality of adjacent memory cells have at least parts of layers 2 and 3, forming recording layers of the resistance change elements 10, formed of the same layer in common, and the high-resistance layer 2 has a larger resistance value than the ion source layer 3. COPYRIGHT: (C)2011,JPO&INPIT |
| format | Patent |
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SOLUTION: The storage element has memory cells each composed of a resistance change element 10 having a recording layer between two electrodes 1 and 4 configured such that the recording layer reversibly changes in resistance value by application of potentials of the different polarities to the two electrodes 1 and 4, wherein the recording layer has a laminate structure comprising an ion source layer 3 containing one or more kinds of elements selected out of Ag, Cu and Zn and one or more kind of elements selected out of S, Se and Te, and a high-resistance layer 2 formed of an insulator or semiconductor. A plurality of adjacent memory cells have at least parts of layers 2 and 3, forming recording layers of the resistance change elements 10, formed of the same layer in common, and the high-resistance layer 2 has a larger resistance value than the ion source layer 3. 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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | STORAGE ELEMENT AND OPERATING METHOD OF STORAGE ELEMENT |
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