STORAGE ELEMENT AND OPERATING METHOD OF STORAGE ELEMENT

PROBLEM TO BE SOLVED: To provide a storage element configured such that it can be easily manufactured with high density. SOLUTION: The storage element has memory cells each composed of a resistance change element 10 having a recording layer between two electrodes 1 and 4 configured such that the recording layer reversibly changes in resistance value by application of potentials of the different polarities to the two electrodes 1 and 4, wherein the recording layer has a laminate structure comprising an ion source layer 3 containing one or more kinds of elements selected out of Ag, Cu and Zn and one or more kind of elements selected out of S, Se and Te, and a high-resistance layer 2 formed of an insulator or semiconductor. A plurality of adjacent memory cells have at least parts of layers 2 and 3, forming recording layers of the resistance change elements 10, formed of the same layer in common, and the high-resistance layer 2 has a larger resistance value than the ion source layer 3. COPYRIGHT: (C)2011,JPO&INPIT