RESIST MATERIAL AND PATTERN FORMING METHOD USING THE SAME

PROBLEM TO BE SOLVED: To prevent shape defects of a pattern by improving the adhesiveness of a resist pattern with a film to be treated. SOLUTION: A resist film 302 formed from a resist containing a butane-1,4-sultam being a heterocyclic sulfone is formed on a substrate 301, and then the resist film...

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Bibliographische Detailangaben
Hauptverfasser:	ENDO MASATAKA, SASAKO MASARU
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To prevent shape defects of a pattern by improving the adhesiveness of a resist pattern with a film to be treated. SOLUTION: A resist film 302 formed from a resist containing a butane-1,4-sultam being a heterocyclic sulfone is formed on a substrate 301, and then the resist film 302 is subjected to pattern exposure by selectively irradiating the resist film 302 with exposure light 303. Subsequently, the resist film subjected to the pattern exposure is developed to form a resist pattern 302a. COPYRIGHT: (C)2011,JPO&INPIT