PLATING TREATMENT METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a technology which suppresses the drying of an anode to be used for electrolytic plating treatment.SOLUTION: This plating method comprises the steps of: arranging an object to be plated so as to cover an opening provided on a plating tank; introducing a plating solut...
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| creator | MISAWA KAZUHIRO YODA HIROYUKI MISAWA HIROSHI |
| description | PROBLEM TO BE SOLVED: To provide a technology which suppresses the drying of an anode to be used for electrolytic plating treatment.SOLUTION: This plating method comprises the steps of: arranging an object to be plated so as to cover an opening provided on a plating tank; introducing a plating solution into the plating tank so as to immerse an exposed portion of the object to be plated which has been arranged at the opening of the plating tank and a plating electrode arranged in the plating tank; conducting plating treatment on the object to be plated by using the plating electrode; discharging the plating solution in the plating tank; arranging a material other than the object to be plated so as to cover the opening of the plating tank; and introducing the plating solution into the plating tank so as to immerse the plating electrode arranged in the plating tank. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2011017064A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2011017064A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2011017064A3</originalsourceid><addsrcrecordid>eNrjZPAK8HEM8fRzVwgJcnUM8XX1C1HwdQ3x8HdRcPRzgTHd_IMUfB39Qt0cnUNCg0Cqg119PZ39_VxCnUOAci6uYZ7OrjwMrGmJOcWpvFCam0HJzTXE2UM3tSA_PrW4IDE5NS-1JN4rwMjA0NDA0NzAzMTRmChFAM2CLfM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PLATING TREATMENT METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>MISAWA KAZUHIRO ; YODA HIROYUKI ; MISAWA HIROSHI</creator><creatorcontrib>MISAWA KAZUHIRO ; YODA HIROYUKI ; MISAWA HIROSHI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a technology which suppresses the drying of an anode to be used for electrolytic plating treatment.SOLUTION: This plating method comprises the steps of: arranging an object to be plated so as to cover an opening provided on a plating tank; introducing a plating solution into the plating tank so as to immerse an exposed portion of the object to be plated which has been arranged at the opening of the plating tank and a plating electrode arranged in the plating tank; conducting plating treatment on the object to be plated by using the plating electrode; discharging the plating solution in the plating tank; arranging a material other than the object to be plated so as to cover the opening of the plating tank; and introducing the plating solution into the plating tank so as to immerse the plating electrode arranged in the plating tank.</description><language>eng</language><subject>APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; SEMICONDUCTOR DEVICES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110127&DB=EPODOC&CC=JP&NR=2011017064A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110127&DB=EPODOC&CC=JP&NR=2011017064A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MISAWA KAZUHIRO</creatorcontrib><creatorcontrib>YODA HIROYUKI</creatorcontrib><creatorcontrib>MISAWA HIROSHI</creatorcontrib><title>PLATING TREATMENT METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To provide a technology which suppresses the drying of an anode to be used for electrolytic plating treatment.SOLUTION: This plating method comprises the steps of: arranging an object to be plated so as to cover an opening provided on a plating tank; introducing a plating solution into the plating tank so as to immerse an exposed portion of the object to be plated which has been arranged at the opening of the plating tank and a plating electrode arranged in the plating tank; conducting plating treatment on the object to be plated by using the plating electrode; discharging the plating solution in the plating tank; arranging a material other than the object to be plated so as to cover the opening of the plating tank; and introducing the plating solution into the plating tank so as to immerse the plating electrode arranged in the plating tank.</description><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>METALLURGY</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAK8HEM8fRzVwgJcnUM8XX1C1HwdQ3x8HdRcPRzgTHd_IMUfB39Qt0cnUNCg0Cqg119PZ39_VxCnUOAci6uYZ7OrjwMrGmJOcWpvFCam0HJzTXE2UM3tSA_PrW4IDE5NS-1JN4rwMjA0NDA0NzAzMTRmChFAM2CLfM</recordid><startdate>20110127</startdate><enddate>20110127</enddate><creator>MISAWA KAZUHIRO</creator><creator>YODA HIROYUKI</creator><creator>MISAWA HIROSHI</creator><scope>EVB</scope></search><sort><creationdate>20110127</creationdate><title>PLATING TREATMENT METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE</title><author>MISAWA KAZUHIRO ; YODA HIROYUKI ; MISAWA HIROSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2011017064A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>METALLURGY</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MISAWA KAZUHIRO</creatorcontrib><creatorcontrib>YODA HIROYUKI</creatorcontrib><creatorcontrib>MISAWA HIROSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MISAWA KAZUHIRO</au><au>YODA HIROYUKI</au><au>MISAWA HIROSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PLATING TREATMENT METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE</title><date>2011-01-27</date><risdate>2011</risdate><abstract>PROBLEM TO BE SOLVED: To provide a technology which suppresses the drying of an anode to be used for electrolytic plating treatment.SOLUTION: This plating method comprises the steps of: arranging an object to be plated so as to cover an opening provided on a plating tank; introducing a plating solution into the plating tank so as to immerse an exposed portion of the object to be plated which has been arranged at the opening of the plating tank and a plating electrode arranged in the plating tank; conducting plating treatment on the object to be plated by using the plating electrode; discharging the plating solution in the plating tank; arranging a material other than the object to be plated so as to cover the opening of the plating tank; and introducing the plating solution into the plating tank so as to immerse the plating electrode arranged in the plating tank.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES |
| title | PLATING TREATMENT METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
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