STATIC RANDOM ACCESS MEMORY (SRAM) CELL AND METHOD FOR FORMING THE SAME

PROBLEM TO BE SOLVED: To provide a static random access memory (SRAM) cell and a method for forming the same. SOLUTION: The static random access memory (SRAM) cell includes active areas of a plurality of transistors. The longitudinal axes of the active areas of the transistors are all parallel. A fi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG PING-WEI, YANG LIE-YONG, CHANG FENG-MING, YANG CHANG-TA
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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