SEMICONDUCTOR NONVOLATILE MEMORY, CHARGE ACCUMULATION METHOD FOR SEMICONDUCTOR NONVOLATILE MEMORY, AND CHARGE ACCUMULATION PROGRAM
PROBLEM TO BE SOLVED: To expand a current window by making a current value distribution width narrower. SOLUTION: A gate voltage is gradually increased (B) as a write-in frequency increases so that a charge is gradually accumulated in charge accumulation sections on a semiconductor substrate. When a...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | YUDA TAKASHI |
| description | PROBLEM TO BE SOLVED: To expand a current window by making a current value distribution width narrower. SOLUTION: A gate voltage is gradually increased (B) as a write-in frequency increases so that a charge is gradually accumulated in charge accumulation sections on a semiconductor substrate. When a value of the current flowing in a channel region has become such a value that an amount of charge to be accumulated in the charge accumulation sections corresponds to predetermined data, and when the current value approaches a target value in a region where the current flowing in the channel region is greater than the predetermined target value, an increase rate in the charge accumulation amount per one time is decreased (C) by lowering a source voltage and a drain voltage. Thus, exceeding the target value, of the accumulation amount of charge to each charge accumulation section is suppressed. COPYRIGHT: (C)2011,JPO&INPIT |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2010225201A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2010225201A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2010225201A3</originalsourceid><addsrcrecordid>eNrjZGgKdvX1dPb3cwl1DvEPUvDz9wvz93EM8fRxVfB19fUPitRRcPZwDHJ3VXB0dg71DQXJ-fsB5UI8_F0U3IBaCBvg6OeC1ZCAIH_3IEdfHgbWtMSc4lReKM3NoOTmGuLsoZtakB-fWlyQmJyal1oS7xVgZGBoYGRkCqQcjYlSBADLyz2q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR NONVOLATILE MEMORY, CHARGE ACCUMULATION METHOD FOR SEMICONDUCTOR NONVOLATILE MEMORY, AND CHARGE ACCUMULATION PROGRAM</title><source>esp@cenet</source><creator>YUDA TAKASHI</creator><creatorcontrib>YUDA TAKASHI</creatorcontrib><description>PROBLEM TO BE SOLVED: To expand a current window by making a current value distribution width narrower. SOLUTION: A gate voltage is gradually increased (B) as a write-in frequency increases so that a charge is gradually accumulated in charge accumulation sections on a semiconductor substrate. When a value of the current flowing in a channel region has become such a value that an amount of charge to be accumulated in the charge accumulation sections corresponds to predetermined data, and when the current value approaches a target value in a region where the current flowing in the channel region is greater than the predetermined target value, an increase rate in the charge accumulation amount per one time is decreased (C) by lowering a source voltage and a drain voltage. Thus, exceeding the target value, of the accumulation amount of charge to each charge accumulation section is suppressed. COPYRIGHT: (C)2011,JPO&INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; SEMICONDUCTOR DEVICES ; STATIC STORES</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20101007&DB=EPODOC&CC=JP&NR=2010225201A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20101007&DB=EPODOC&CC=JP&NR=2010225201A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YUDA TAKASHI</creatorcontrib><title>SEMICONDUCTOR NONVOLATILE MEMORY, CHARGE ACCUMULATION METHOD FOR SEMICONDUCTOR NONVOLATILE MEMORY, AND CHARGE ACCUMULATION PROGRAM</title><description>PROBLEM TO BE SOLVED: To expand a current window by making a current value distribution width narrower. SOLUTION: A gate voltage is gradually increased (B) as a write-in frequency increases so that a charge is gradually accumulated in charge accumulation sections on a semiconductor substrate. When a value of the current flowing in a channel region has become such a value that an amount of charge to be accumulated in the charge accumulation sections corresponds to predetermined data, and when the current value approaches a target value in a region where the current flowing in the channel region is greater than the predetermined target value, an increase rate in the charge accumulation amount per one time is decreased (C) by lowering a source voltage and a drain voltage. Thus, exceeding the target value, of the accumulation amount of charge to each charge accumulation section is suppressed. COPYRIGHT: (C)2011,JPO&INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZGgKdvX1dPb3cwl1DvEPUvDz9wvz93EM8fRxVfB19fUPitRRcPZwDHJ3VXB0dg71DQXJ-fsB5UI8_F0U3IBaCBvg6OeC1ZCAIH_3IEdfHgbWtMSc4lReKM3NoOTmGuLsoZtakB-fWlyQmJyal1oS7xVgZGBoYGRkCqQcjYlSBADLyz2q</recordid><startdate>20101007</startdate><enddate>20101007</enddate><creator>YUDA TAKASHI</creator><scope>EVB</scope></search><sort><creationdate>20101007</creationdate><title>SEMICONDUCTOR NONVOLATILE MEMORY, CHARGE ACCUMULATION METHOD FOR SEMICONDUCTOR NONVOLATILE MEMORY, AND CHARGE ACCUMULATION PROGRAM</title><author>YUDA TAKASHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2010225201A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2010</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>YUDA TAKASHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YUDA TAKASHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR NONVOLATILE MEMORY, CHARGE ACCUMULATION METHOD FOR SEMICONDUCTOR NONVOLATILE MEMORY, AND CHARGE ACCUMULATION PROGRAM</title><date>2010-10-07</date><risdate>2010</risdate><abstract>PROBLEM TO BE SOLVED: To expand a current window by making a current value distribution width narrower. SOLUTION: A gate voltage is gradually increased (B) as a write-in frequency increases so that a charge is gradually accumulated in charge accumulation sections on a semiconductor substrate. When a value of the current flowing in a channel region has become such a value that an amount of charge to be accumulated in the charge accumulation sections corresponds to predetermined data, and when the current value approaches a target value in a region where the current flowing in the channel region is greater than the predetermined target value, an increase rate in the charge accumulation amount per one time is decreased (C) by lowering a source voltage and a drain voltage. Thus, exceeding the target value, of the accumulation amount of charge to each charge accumulation section is suppressed. COPYRIGHT: (C)2011,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JP2010225201A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
| title | SEMICONDUCTOR NONVOLATILE MEMORY, CHARGE ACCUMULATION METHOD FOR SEMICONDUCTOR NONVOLATILE MEMORY, AND CHARGE ACCUMULATION PROGRAM |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T23%3A15%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YUDA%20TAKASHI&rft.date=2010-10-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2010225201A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |