PLASMA TREATMENT APPARATUS
PROBLEM TO BE SOLVED: To secure the reproducibility and reliability of a process by reducing a standing wave caused by harmonics from a plasma generated on a transmission line for transmitting high frequency power. SOLUTION: A treatment apparatus includes: a treatment chamber 37 with a treatment gas...
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| creator | OGOSHI YASUO ITO ATSUSHI IIDA TSUTOMU |
| description | PROBLEM TO BE SOLVED: To secure the reproducibility and reliability of a process by reducing a standing wave caused by harmonics from a plasma generated on a transmission line for transmitting high frequency power. SOLUTION: A treatment apparatus includes: a treatment chamber 37 with a treatment gas supply device; an antenna 38 which is arranged in the treatment chamber and supplies high frequency energy to treatment gas from a high frequency power supply for generating plasma and generates the plasma; and a substrate electrode 1 arranged in the treatment chamber, the treatment apparatus supplies a high frequency voltage for ion pull-in to the substrate electrode, accelerates the ion in the plasma to apply plasma treatment to a sample loaded on the substrate electrode. The treatment apparatus further includes: cable length switching means 15a, 15b for switching lengths of cables 9a, 9b, 9c; a reflected wave detection means 13 for detecting a reflected wave from the side of the substrate electrode; and a switching control means 14 for controlling the cable length switching means, and switches a cable length to a preset length for each process condition prior to process treatment to lower a harmonic level of the reflected wave. COPYRIGHT: (C)2010,JPO&INPIT |
| format | Patent |
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SOLUTION: A treatment apparatus includes: a treatment chamber 37 with a treatment gas supply device; an antenna 38 which is arranged in the treatment chamber and supplies high frequency energy to treatment gas from a high frequency power supply for generating plasma and generates the plasma; and a substrate electrode 1 arranged in the treatment chamber, the treatment apparatus supplies a high frequency voltage for ion pull-in to the substrate electrode, accelerates the ion in the plasma to apply plasma treatment to a sample loaded on the substrate electrode. The treatment apparatus further includes: cable length switching means 15a, 15b for switching lengths of cables 9a, 9b, 9c; a reflected wave detection means 13 for detecting a reflected wave from the side of the substrate electrode; and a switching control means 14 for controlling the cable length switching means, and switches a cable length to a preset length for each process condition prior to process treatment to lower a harmonic level of the reflected wave. 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The treatment apparatus further includes: cable length switching means 15a, 15b for switching lengths of cables 9a, 9b, 9c; a reflected wave detection means 13 for detecting a reflected wave from the side of the substrate electrode; and a switching control means 14 for controlling the cable length switching means, and switches a cable length to a preset length for each process condition prior to process treatment to lower a harmonic level of the reflected wave. 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The treatment apparatus further includes: cable length switching means 15a, 15b for switching lengths of cables 9a, 9b, 9c; a reflected wave detection means 13 for detecting a reflected wave from the side of the substrate electrode; and a switching control means 14 for controlling the cable length switching means, and switches a cable length to a preset length for each process condition prior to process treatment to lower a harmonic level of the reflected wave. COPYRIGHT: (C)2010,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES |
| title | PLASMA TREATMENT APPARATUS |
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