POWER SEMICONDUCTOR DEVICE AND INVERTER DEVICE USING THE SAME

PROBLEM TO BE SOLVED: To provide a power semiconductor device and an inverter device, capable of improving the efficiency of cooling a power semiconductor device, compatible with an improved current-carrying capacity and miniaturization, and being superior in productivity. SOLUTION: Power semiconduc...

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Hauptverfasser: MORIKAWA RYUICHI, OBE TOSHIHARU, SEKIYA HIRONORI, TADA NOBUMITSU, YOSHIOKA SHINPEI, NINOMIYA TAKESHI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a power semiconductor device and an inverter device, capable of improving the efficiency of cooling a power semiconductor device, compatible with an improved current-carrying capacity and miniaturization, and being superior in productivity. SOLUTION: Power semiconductor devices for respective phases of the inverter device are bonded on a heat sink 22 using insulating resin sheets 36, 42, 43. A semiconductor chip is bonded between a W phase positive conductor 33 and a W phase first AC conductor 35, and heat generated from the semiconductor chip is dissipated from the heat sink 22 via the W phase positive conductor 33 and the W phase first AC conductor 35 from both sides. COPYRIGHT: (C)2010,JPO&INPIT