METHOD OF ION IMPLANTATION FOR ACHIEVING DESIRED DOPANT CONCENTRATION

PROBLEM TO BE SOLVED: To provide a method of forming a plurality of MOSFETs each of which has a uniquely determined threshold voltage. SOLUTION: A doped well or a tub is formed for each MOSFET. Next, a patterned mask is used in order to form a material line near each semiconductor well. In this case...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LAYMAN PAUL ARTHUR, CHAUDHRY SAMIR
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!