METHOD FOR REMOVING MATERIAL FROM SUBSTRATE

PROBLEM TO BE SOLVED: To identify alternative techniques and compositions for treatment to remove organic materials, and especially photoresist materials, from substrates such as semiconductor wafers. SOLUTION: A method of removing materials, and preferably photoresist, from a substrate 18 includes...

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Bibliographische Detailangaben
Hauptverfasser:	RUETHER PATRICIA ANN, WAGENER THOMAS J, HANESTAD RONALD J, CHRISTENSON KURT KARL
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL ATOMISING APPARATUS BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY CLEANING CLEANING IN GENERAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR NOZZLES ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES SPRAYING APPARATUS SPRAYING OR ATOMISING IN GENERAL TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To identify alternative techniques and compositions for treatment to remove organic materials, and especially photoresist materials, from substrates such as semiconductor wafers. SOLUTION: A method of removing materials, and preferably photoresist, from a substrate 18 includes dispensing a liquid sulfuric acid composition including sulfuric acid and/or its desiccating species and precursors and having a water/sulfuric acid molar ratio of less than 5:1 onto a material coated substrate in an amount effective to substantially uniformly coat the material coated substrate. The substrate is preferably heated to a temperature of at least about 90°C, either before, during or after dispensing of the liquid sulfuric acid composition. After the substrate is at a temperature of at least about 90°C, the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate is then preferably rinsed to remove the material. COPYRIGHT: (C)2010,JPO&INPIT