PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING MOLD FOR IMPRINTING
PROBLEM TO BE SOLVED: To provide a pattern forming method for reducing dimensional variations and suppressing an increase in the cost. SOLUTION: A plurality of first exposure segments are arranged in adjoining one another in a pattern area defined on a substrate where a resist film is formed; and th...
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| creator | SANO NAOTAKE CHIBA TAKESHI FUJITA HIROSHI |
| description | PROBLEM TO BE SOLVED: To provide a pattern forming method for reducing dimensional variations and suppressing an increase in the cost. SOLUTION: A plurality of first exposure segments are arranged in adjoining one another in a pattern area defined on a substrate where a resist film is formed; and the resist film in each first exposure segment is successively exposed to light in a first exposure luminous energy to transfer a mask pattern over the entire pattern area. A plurality of second exposure segments in the same size as the first exposure segments are arranged and set as shifted in a row direction and a column direction with respect to the first exposure segments by optional integral times of the width corresponding to the pitch of repeated figures of the mask pattern so as partially overlap each other; the resist film in each second exposure segment is successively exposed to light at a second exposure luminous energy over an area wider than the pattern area. The total of the first and second exposure luminous energy is controlled in such a manner that a drawn image in the resist film is formed into dimensions in a desired dimensional range in the pattern area but not formed out of the pattern area. COPYRIGHT: (C)2010,JPO&INPIT |
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SOLUTION: A plurality of first exposure segments are arranged in adjoining one another in a pattern area defined on a substrate where a resist film is formed; and the resist film in each first exposure segment is successively exposed to light in a first exposure luminous energy to transfer a mask pattern over the entire pattern area. A plurality of second exposure segments in the same size as the first exposure segments are arranged and set as shifted in a row direction and a column direction with respect to the first exposure segments by optional integral times of the width corresponding to the pitch of repeated figures of the mask pattern so as partially overlap each other; the resist film in each second exposure segment is successively exposed to light at a second exposure luminous energy over an area wider than the pattern area. The total of the first and second exposure luminous energy is controlled in such a manner that a drawn image in the resist film is formed into dimensions in a desired dimensional range in the pattern area but not formed out of the pattern area. 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The total of the first and second exposure luminous energy is controlled in such a manner that a drawn image in the resist film is formed into dimensions in a desired dimensional range in the pattern area but not formed out of the pattern area. 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SOLUTION: A plurality of first exposure segments are arranged in adjoining one another in a pattern area defined on a substrate where a resist film is formed; and the resist film in each first exposure segment is successively exposed to light in a first exposure luminous energy to transfer a mask pattern over the entire pattern area. A plurality of second exposure segments in the same size as the first exposure segments are arranged and set as shifted in a row direction and a column direction with respect to the first exposure segments by optional integral times of the width corresponding to the pitch of repeated figures of the mask pattern so as partially overlap each other; the resist film in each second exposure segment is successively exposed to light at a second exposure luminous energy over an area wider than the pattern area. 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| subjects | AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR SHAPING OR JOINING OF PLASTICS TRANSPORTING WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL |
| title | PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING MOLD FOR IMPRINTING |
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