HETERO-NANOWIRE AND PRODUCTION METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a hetero-nanowire, which further develops possibilities of hetero-nanowires and includes a hetero-structure composed of zinc sulfide and zinc oxide. SOLUTION: The hetero-nanowire comprises the same composition in the longitudinal direction and has composition regions...

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Hauptverfasser:	FANG XIAOSHENG, BANDO YOSHIO, SEKIGUCHI TAKASHI, DEMITRY GOLBERG
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH MANUFACTURE OR TREATMENT THEREOF METALLURGY NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a hetero-nanowire, which further develops possibilities of hetero-nanowires and includes a hetero-structure composed of zinc sulfide and zinc oxide. SOLUTION: The hetero-nanowire comprises the same composition in the longitudinal direction and has composition regions different from each other in one side and the other side intersecting the longitudinal direction, wherein one of the composition regions different from each other is zinc sulfide and the other is zinc oxide. In the composition region made of zinc sulfide, crystals of hexagonal zinc sulfide and cubic zinc sulfide are alternately grown in the longitudinal direction or grown into single crystals. The production method comprises: disposing a zinc sulfide powder in an inert gas flow passage; disposing a silicon substrate on which a gold thin film is deposited, in the downstream side than the position of the zinc sulfide powder; respectively heating the zinc oxide powder to the sublimation temperature of the powder and the silicon substrate to a temperature lower than the sublimation temperature of the zinc sulfide powder, while allowing an inert gas to flow, so as to produce hetero-nanowires on the silicon substrate surface. COPYRIGHT: (C)2010,JPO&INPIT