SUBSTRATE TREATMENT APPARATUS
PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus which has reduced the frequency of maintenance. SOLUTION: This substrate treatment apparatus includes: a space for producing plasma; a first-gas-supplying part which supplies a first gas to the space for producing the plasma; a plasma-...
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| creator | TSUNODA TORU HIYAMA MAKOTO |
| description | PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus which has reduced the frequency of maintenance. SOLUTION: This substrate treatment apparatus includes: a space for producing plasma; a first-gas-supplying part which supplies a first gas to the space for producing the plasma; a plasma-producing part which converts the first gas supplied to the space for producing the plasma into the plasma and produces a radical of the first gas which has been converted into the plasma; an extracting part which extracts a radical component of the first gas that has been converted into the plasma in the space for producing the plasma; a second-gas-supplying part for supplying a second gas which is different from the first gas; and a treatment chamber which treats a substrate by making the radical extracted from the extracting part react with the second gas supplied from the second-gas-supplying part. COPYRIGHT: (C)2010,JPO&INPIT |
| format | Patent |
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SOLUTION: This substrate treatment apparatus includes: a space for producing plasma; a first-gas-supplying part which supplies a first gas to the space for producing the plasma; a plasma-producing part which converts the first gas supplied to the space for producing the plasma into the plasma and produces a radical of the first gas which has been converted into the plasma; an extracting part which extracts a radical component of the first gas that has been converted into the plasma in the space for producing the plasma; a second-gas-supplying part for supplying a second gas which is different from the first gas; and a treatment chamber which treats a substrate by making the radical extracted from the extracting part react with the second gas supplied from the second-gas-supplying part. 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SOLUTION: This substrate treatment apparatus includes: a space for producing plasma; a first-gas-supplying part which supplies a first gas to the space for producing the plasma; a plasma-producing part which converts the first gas supplied to the space for producing the plasma into the plasma and produces a radical of the first gas which has been converted into the plasma; an extracting part which extracts a radical component of the first gas that has been converted into the plasma in the space for producing the plasma; a second-gas-supplying part for supplying a second gas which is different from the first gas; and a treatment chamber which treats a substrate by making the radical extracted from the extracting part react with the second gas supplied from the second-gas-supplying part. 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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SUBSTRATE TREATMENT APPARATUS |
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