METHOD FOR PRODUCING NANOWIRE, NANOWIRE ELEMENT, AND NANOWIRE STRUCTURE
PROBLEM TO BE SOLVED: To provide a method for producing nanowires, by which single crystal nanowires maintaining a crystal state of a crystal substrate and free of defects can be grown. SOLUTION: The formation of side facet necessary for free-standing nanowire is made unstable and the growth of a na...
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| creator | SHO KOKUKYO TATENO KOTA |
| description | PROBLEM TO BE SOLVED: To provide a method for producing nanowires, by which single crystal nanowires maintaining a crystal state of a crystal substrate and free of defects can be grown. SOLUTION: The formation of side facet necessary for free-standing nanowire is made unstable and the growth of a nanowire in a direction parallel to the surface of a crystal substrate and along the surface is made possible by growing the nanowire under growth conditions purposefully shifted from the relatively narrow range of growth conditions allowing the growth of the free-standing nanowire. Alternatively, it is possible to continuously arrange an n-type InP-nanowire 3n and a p-type InP nanowire 3p by switching, for example, the dopant on the way of growth of the nanowire, and further, a net-like semiconductor film can be obtained by crossing a plurality of parallel nanowires. COPYRIGHT: (C)2010,JPO&INPIT |
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SOLUTION: The formation of side facet necessary for free-standing nanowire is made unstable and the growth of a nanowire in a direction parallel to the surface of a crystal substrate and along the surface is made possible by growing the nanowire under growth conditions purposefully shifted from the relatively narrow range of growth conditions allowing the growth of the free-standing nanowire. Alternatively, it is possible to continuously arrange an n-type InP-nanowire 3n and a p-type InP nanowire 3p by switching, for example, the dopant on the way of growth of the nanowire, and further, a net-like semiconductor film can be obtained by crossing a plurality of parallel nanowires. 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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | METHOD FOR PRODUCING NANOWIRE, NANOWIRE ELEMENT, AND NANOWIRE STRUCTURE |
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