CHEMICAL-MECHANICAL POLISHING PAD, AND CHEMICAL-MECHANICAL POLISHING METHOD
PROBLEM TO BE SOLVED: To provide: a chemical-mechanical polishing pad capable of preventing damage of a polishing layer during chemical-mechanical polishing; and a chemical-mechanical polishing method capable of carrying out high-quality chemical-mechanical polishing over a long time by using the ch...
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| creator | TSUJI AKIMORI TANO HIROYUKI TONSHO SHINJI |
| description | PROBLEM TO BE SOLVED: To provide: a chemical-mechanical polishing pad capable of preventing damage of a polishing layer during chemical-mechanical polishing; and a chemical-mechanical polishing method capable of carrying out high-quality chemical-mechanical polishing over a long time by using the chemical-mechanical polishing pad. SOLUTION: This chemical-mechanical polishing pad 10 used for chemical-mechanical polishing includes a polishing layer 11 having a polishing surface 20, a non-polishing surface 22 located on the side opposite to the polishing surface, and a recessed part 24 formed in a region including a center part of the non-polishing surface. The recessed part is provided with a plurality of bottom parts 25 and 26 having depths different from one another. COPYRIGHT: (C)2009,JPO&INPIT |
| format | Patent |
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SOLUTION: This chemical-mechanical polishing pad 10 used for chemical-mechanical polishing includes a polishing layer 11 having a polishing surface 20, a non-polishing surface 22 located on the side opposite to the polishing surface, and a recessed part 24 formed in a region including a center part of the non-polishing surface. The recessed part is provided with a plurality of bottom parts 25 and 26 having depths different from one another. COPYRIGHT: (C)2009,JPO&INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; PERFORMING OPERATIONS ; POLISHING ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090924&DB=EPODOC&CC=JP&NR=2009218533A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090924&DB=EPODOC&CC=JP&NR=2009218533A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TSUJI AKIMORI</creatorcontrib><creatorcontrib>TANO HIROYUKI</creatorcontrib><creatorcontrib>TONSHO SHINJI</creatorcontrib><title>CHEMICAL-MECHANICAL POLISHING PAD, AND CHEMICAL-MECHANICAL POLISHING METHOD</title><description>PROBLEM TO BE SOLVED: To provide: a chemical-mechanical polishing pad capable of preventing damage of a polishing layer during chemical-mechanical polishing; and a chemical-mechanical polishing method capable of carrying out high-quality chemical-mechanical polishing over a long time by using the chemical-mechanical polishing pad. SOLUTION: This chemical-mechanical polishing pad 10 used for chemical-mechanical polishing includes a polishing layer 11 having a polishing surface 20, a non-polishing surface 22 located on the side opposite to the polishing surface, and a recessed part 24 formed in a region including a center part of the non-polishing surface. The recessed part is provided with a plurality of bottom parts 25 and 26 having depths different from one another. 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SOLUTION: This chemical-mechanical polishing pad 10 used for chemical-mechanical polishing includes a polishing layer 11 having a polishing surface 20, a non-polishing surface 22 located on the side opposite to the polishing surface, and a recessed part 24 formed in a region including a center part of the non-polishing surface. The recessed part is provided with a plurality of bottom parts 25 and 26 having depths different from one another. COPYRIGHT: (C)2009,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING |
| title | CHEMICAL-MECHANICAL POLISHING PAD, AND CHEMICAL-MECHANICAL POLISHING METHOD |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T08%3A23%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TSUJI%20AKIMORI&rft.date=2009-09-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2009218533A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |