SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR MANUFACTURING/INSPECTING DEVICE AND INSPECTING DEVICE
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a Cu wiring containing a basic crystal structure which is not affected by variation in wiring width and capable of reducing a surface defect to a level lower than a practicable level, and to provide its inspecting technique. SOLUTION:...
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| creator | TAKADA YUJI FUJIWARA TETSUO HIROSE YUKINORI NAKANO HIROSHI SUDO KEIKI KATO TAKAHIKO SUGANO ITARU SHONO TOMOTAKA AKABOSHI HARUO |
| description | PROBLEM TO BE SOLVED: To provide a semiconductor device which has a Cu wiring containing a basic crystal structure which is not affected by variation in wiring width and capable of reducing a surface defect to a level lower than a practicable level, and to provide its inspecting technique. SOLUTION: In the semiconductor device, a barrier film and a seed film are specified, and further a proportion (frequency) of a corresponding (CSL) grain boundary in which a grain boundary Σ value is 27 or below in the whole crystal grain boundary of the Cu wiring is set at ≥60%, thereby a surface defect can be reduced to ≤1/10 of a practicable present level. Further, in the semiconductor device, the barrier film and the seed film are specified, and a proportion (frequency) of a corresponding (CSL) grain boundary in which the grain boundary Σ value is 3 in the whole crystal grain boundary of the Cu wiring is set at ≥40%, thereby an effect similar to surface defect reduction can be acquired. COPYRIGHT: (C)2009,JPO&INPIT |
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SOLUTION: In the semiconductor device, a barrier film and a seed film are specified, and further a proportion (frequency) of a corresponding (CSL) grain boundary in which a grain boundary Σ value is 27 or below in the whole crystal grain boundary of the Cu wiring is set at ≥60%, thereby a surface defect can be reduced to ≤1/10 of a practicable present level. Further, in the semiconductor device, the barrier film and the seed film are specified, and a proportion (frequency) of a corresponding (CSL) grain boundary in which the grain boundary Σ value is 3 in the whole crystal grain boundary of the Cu wiring is set at ≥40%, thereby an effect similar to surface defect reduction can be acquired. 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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR MANUFACTURING/INSPECTING DEVICE AND INSPECTING DEVICE |
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