METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR SUBSTRATE PROCESSING DEVICE

PROBLEM TO BE SOLVED: To provide: a semiconductor substrate processing device improved in a temperature transition characteristic in raising/lowering the temperature of the semiconductor substrate, and temperature uniformity in a substrate surface; and a method of manufacturing a semiconductor devic...

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Hauptverfasser: TANAKA MIKIHIRO, UJIMARU NAOHIKO
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creator TANAKA MIKIHIRO
UJIMARU NAOHIKO
description PROBLEM TO BE SOLVED: To provide: a semiconductor substrate processing device improved in a temperature transition characteristic in raising/lowering the temperature of the semiconductor substrate, and temperature uniformity in a substrate surface; and a method of manufacturing a semiconductor device. SOLUTION: Heaters 6 are incorporated in a pedestal 4 heating a semiconductor substrate 1, and thermometers 9 are incorporated in a thermally-conductive plate 5 installed in contact with a surface of the pedestal 4 at positions facing the heaters 6. Based on a measurement temperature measured with the thermometers 9 by a temperature control unit 10 with the facing surfaces of the semiconductor substrate 1 and the thermally-conductive plate 5 held in parallel to each other at a certain minute distance by support bodies 7, and a preset set temperature, contact pressure between the pedestal 4 and the thermally-conductive plate 5 is adjusted by controlling fixing screws 2 and motors 3 along with temperature control of the heaters 6 to set the measurement temperature at the set temperature. COPYRIGHT: (C)2009,JPO&INPIT
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2009164483A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2009164483A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2009164483A3</originalsourceid><addsrcrecordid>eNrjZIj2dQ3x8HdR8HdT8HX0C3VzdA4JDfL0c1cIdvX1dPb3cwl1DvEPUnBxDfN0dtVRcPRzQZMJDnUKDglyDHFVCAjyd3YNDgZphijnYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBgaWhmYmJhbGjsZEKQIAEycy4Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR SUBSTRATE PROCESSING DEVICE</title><source>esp@cenet</source><creator>TANAKA MIKIHIRO ; UJIMARU NAOHIKO</creator><creatorcontrib>TANAKA MIKIHIRO ; UJIMARU NAOHIKO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide: a semiconductor substrate processing device improved in a temperature transition characteristic in raising/lowering the temperature of the semiconductor substrate, and temperature uniformity in a substrate surface; and a method of manufacturing a semiconductor device. SOLUTION: Heaters 6 are incorporated in a pedestal 4 heating a semiconductor substrate 1, and thermometers 9 are incorporated in a thermally-conductive plate 5 installed in contact with a surface of the pedestal 4 at positions facing the heaters 6. Based on a measurement temperature measured with the thermometers 9 by a temperature control unit 10 with the facing surfaces of the semiconductor substrate 1 and the thermally-conductive plate 5 held in parallel to each other at a certain minute distance by support bodies 7, and a preset set temperature, contact pressure between the pedestal 4 and the thermally-conductive plate 5 is adjusted by controlling fixing screws 2 and motors 3 along with temperature control of the heaters 6 to set the measurement temperature at the set temperature. COPYRIGHT: (C)2009,JPO&amp;INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20090723&amp;DB=EPODOC&amp;CC=JP&amp;NR=2009164483A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20090723&amp;DB=EPODOC&amp;CC=JP&amp;NR=2009164483A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TANAKA MIKIHIRO</creatorcontrib><creatorcontrib>UJIMARU NAOHIKO</creatorcontrib><title>METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR SUBSTRATE PROCESSING DEVICE</title><description>PROBLEM TO BE SOLVED: To provide: a semiconductor substrate processing device improved in a temperature transition characteristic in raising/lowering the temperature of the semiconductor substrate, and temperature uniformity in a substrate surface; and a method of manufacturing a semiconductor device. SOLUTION: Heaters 6 are incorporated in a pedestal 4 heating a semiconductor substrate 1, and thermometers 9 are incorporated in a thermally-conductive plate 5 installed in contact with a surface of the pedestal 4 at positions facing the heaters 6. Based on a measurement temperature measured with the thermometers 9 by a temperature control unit 10 with the facing surfaces of the semiconductor substrate 1 and the thermally-conductive plate 5 held in parallel to each other at a certain minute distance by support bodies 7, and a preset set temperature, contact pressure between the pedestal 4 and the thermally-conductive plate 5 is adjusted by controlling fixing screws 2 and motors 3 along with temperature control of the heaters 6 to set the measurement temperature at the set temperature. COPYRIGHT: (C)2009,JPO&amp;INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIj2dQ3x8HdR8HdT8HX0C3VzdA4JDfL0c1cIdvX1dPb3cwl1DvEPUnBxDfN0dtVRcPRzQZMJDnUKDglyDHFVCAjyd3YNDgZphijnYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBgaWhmYmJhbGjsZEKQIAEycy4Q</recordid><startdate>20090723</startdate><enddate>20090723</enddate><creator>TANAKA MIKIHIRO</creator><creator>UJIMARU NAOHIKO</creator><scope>EVB</scope></search><sort><creationdate>20090723</creationdate><title>METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR SUBSTRATE PROCESSING DEVICE</title><author>TANAKA MIKIHIRO ; UJIMARU NAOHIKO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2009164483A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TANAKA MIKIHIRO</creatorcontrib><creatorcontrib>UJIMARU NAOHIKO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TANAKA MIKIHIRO</au><au>UJIMARU NAOHIKO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR SUBSTRATE PROCESSING DEVICE</title><date>2009-07-23</date><risdate>2009</risdate><abstract>PROBLEM TO BE SOLVED: To provide: a semiconductor substrate processing device improved in a temperature transition characteristic in raising/lowering the temperature of the semiconductor substrate, and temperature uniformity in a substrate surface; and a method of manufacturing a semiconductor device. SOLUTION: Heaters 6 are incorporated in a pedestal 4 heating a semiconductor substrate 1, and thermometers 9 are incorporated in a thermally-conductive plate 5 installed in contact with a surface of the pedestal 4 at positions facing the heaters 6. Based on a measurement temperature measured with the thermometers 9 by a temperature control unit 10 with the facing surfaces of the semiconductor substrate 1 and the thermally-conductive plate 5 held in parallel to each other at a certain minute distance by support bodies 7, and a preset set temperature, contact pressure between the pedestal 4 and the thermally-conductive plate 5 is adjusted by controlling fixing screws 2 and motors 3 along with temperature control of the heaters 6 to set the measurement temperature at the set temperature. COPYRIGHT: (C)2009,JPO&amp;INPIT</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR SUBSTRATE PROCESSING DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T08%3A28%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TANAKA%20MIKIHIRO&rft.date=2009-07-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2009164483A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true