PHASE CHANGE MEMORY
PROBLEM TO BE SOLVED: To provide a phase change memory capable of applying a reset current to phase change film for making it amorphous without the need for making the whole device larger and the need for a complicated manufacturing process. SOLUTION: The phase change memory 80 includes a phase chan...
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| creator | KOGA TAKESHI MAKI YUKIO NITTA FUMIHIKO MATSUOKA MASAMICHI SHIGENIWA MASAHIRO |
| description | PROBLEM TO BE SOLVED: To provide a phase change memory capable of applying a reset current to phase change film for making it amorphous without the need for making the whole device larger and the need for a complicated manufacturing process. SOLUTION: The phase change memory 80 includes a phase change film 16, lower plugs 12, 13 and an insulating film 15 between the phase change film 16 and lower plugs 12, 13. At a portion where the phase change film 16 connects with lower plugs 12, 13, lower plugs 12, 13 include a first region and a second region. The thickness of the insulating film 15 on lower plugs 12, 13 in the first region is zero or thinner than that of the insulating film 15 on lower plugs 12, 13 in the second region, thereby the current can be concentrated at lower plugs in the first region. In other words, the current density increases. Due to the current density rise, the phase change film 16 can be amorphous even if the value of reset current is lowered. COPYRIGHT: (C)2009,JPO&INPIT |
| format | Patent |
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SOLUTION: The phase change memory 80 includes a phase change film 16, lower plugs 12, 13 and an insulating film 15 between the phase change film 16 and lower plugs 12, 13. At a portion where the phase change film 16 connects with lower plugs 12, 13, lower plugs 12, 13 include a first region and a second region. The thickness of the insulating film 15 on lower plugs 12, 13 in the first region is zero or thinner than that of the insulating film 15 on lower plugs 12, 13 in the second region, thereby the current can be concentrated at lower plugs in the first region. In other words, the current density increases. Due to the current density rise, the phase change film 16 can be amorphous even if the value of reset current is lowered. 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SOLUTION: The phase change memory 80 includes a phase change film 16, lower plugs 12, 13 and an insulating film 15 between the phase change film 16 and lower plugs 12, 13. At a portion where the phase change film 16 connects with lower plugs 12, 13, lower plugs 12, 13 include a first region and a second region. The thickness of the insulating film 15 on lower plugs 12, 13 in the first region is zero or thinner than that of the insulating film 15 on lower plugs 12, 13 in the second region, thereby the current can be concentrated at lower plugs in the first region. In other words, the current density increases. Due to the current density rise, the phase change film 16 can be amorphous even if the value of reset current is lowered. 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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | PHASE CHANGE MEMORY |
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