PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD
PROBLEM TO BE SOLVED: To provide a plasma processing device capable of improving plasma processing capability without deteriorating the capability of surface activation process by ultraviolet irradiation of a UV irradiation means adjacently installed with a plasma supply means. SOLUTION: The plasma...
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| creator | HIRAI TAKAHIKO SHIBATA TETSUJI |
| description | PROBLEM TO BE SOLVED: To provide a plasma processing device capable of improving plasma processing capability without deteriorating the capability of surface activation process by ultraviolet irradiation of a UV irradiation means adjacently installed with a plasma supply means. SOLUTION: The plasma processing device includes: a UV irradiation means 1 for irradiating ultraviolet rays UV on the surface of an object S to be processed; and a plasma supply means 2 for supplying plasma P on the surface of the object S with the ultraviolet rays UV irradiated by the UV irradiation means 1, both means arranged adjacent to each other. An ozone ingress prevention means 3 for preventing ingress ozone generated at the plasma supply means 2 between the UV irradiation means 1 and the object S, is provided between the UV irradiation means 1 and the plasma supply means 2. By the ozone ingress prevention means 3, the UV irradiation means 1 and the plasma supply means 2 are spatially nearly blocked. Thus, the ozone generated at the plasma supply means 2 is prevented from ingress between the UV irradiation means 1 and the object S. COPYRIGHT: (C)2009,JPO&INPIT |
| format | Patent |
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SOLUTION: The plasma processing device includes: a UV irradiation means 1 for irradiating ultraviolet rays UV on the surface of an object S to be processed; and a plasma supply means 2 for supplying plasma P on the surface of the object S with the ultraviolet rays UV irradiated by the UV irradiation means 1, both means arranged adjacent to each other. An ozone ingress prevention means 3 for preventing ingress ozone generated at the plasma supply means 2 between the UV irradiation means 1 and the object S, is provided between the UV irradiation means 1 and the plasma supply means 2. By the ozone ingress prevention means 3, the UV irradiation means 1 and the plasma supply means 2 are spatially nearly blocked. Thus, the ozone generated at the plasma supply means 2 is prevented from ingress between the UV irradiation means 1 and the object S. 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| subjects | BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS PLASMA TECHNIQUE PRINTED CIRCUITS PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES |
| title | PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD |
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