METHOD OF MANUFACTURING TRENCH GATE TYPE SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To suppress inconvenience such as deterioration of gate breakdown voltage and reliability due to film thinning in an insulator. SOLUTION: A method of manufacturing a trench gate-type semiconductor device where a gate electrode is arranged in a trench part contains a first step...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	HISANAGA YUKIHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!