FLUORESCENT X-RAY ANALYSIS APPARATUS, AND FLUORESCENT X-RAY ANALYSIS METHOD
PROBLEM TO BE SOLVED: To provide a fluorescent X-ray analysis apparatus and fluorescent X-ray analysis method capable of performing sensitive measurement on a wafer surface, especially near the outer periphery of the wafer surface. SOLUTION: This fluorescent X-ray analysis apparatus 1 comprises an X...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | MURAKAMI HIROYOSHI NOGUCHI SACHIKO |
description | PROBLEM TO BE SOLVED: To provide a fluorescent X-ray analysis apparatus and fluorescent X-ray analysis method capable of performing sensitive measurement on a wafer surface, especially near the outer periphery of the wafer surface. SOLUTION: This fluorescent X-ray analysis apparatus 1 comprises an X-ray beam irradiating means 2 for irradiating the wafer 6 to be measured with an X-ray beam substantially horizontally, a detecting means 3 for detecting fluorescent X-rays generated by irradiation, a signal processing section (not shown) for processing a detection result, and a positioning means 4 for holding and positioning the wafer 6. The positioning means 4 has the wafer 6 to be measured, and positions a detection region 8 by the detecting means 3, by moving the wafer 6, to a position avoiding a scattered light generating region 10 where the X-ray beam 7 is made to come to the outer peripheral surface of the wafer 6 to generate scattered light. COPYRIGHT: (C)2009,JPO&INPIT |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2009075018A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2009075018A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2009075018A3</originalsourceid><addsrcrecordid>eNrjZPB28wn1D3INdnb1C1GI0A1yjFRw9HP0iQz2DFZwDAhwDHIMCQ3WAYq5KOBR6esa4uHvwsPAmpaYU5zKC6W5GZTcXEOcPXRTC_LjU4sLEpNT81JL4r0CjAwMLA3MTQ0MLRyNiVIEAAY4LlU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>FLUORESCENT X-RAY ANALYSIS APPARATUS, AND FLUORESCENT X-RAY ANALYSIS METHOD</title><source>esp@cenet</source><creator>MURAKAMI HIROYOSHI ; NOGUCHI SACHIKO</creator><creatorcontrib>MURAKAMI HIROYOSHI ; NOGUCHI SACHIKO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a fluorescent X-ray analysis apparatus and fluorescent X-ray analysis method capable of performing sensitive measurement on a wafer surface, especially near the outer periphery of the wafer surface. SOLUTION: This fluorescent X-ray analysis apparatus 1 comprises an X-ray beam irradiating means 2 for irradiating the wafer 6 to be measured with an X-ray beam substantially horizontally, a detecting means 3 for detecting fluorescent X-rays generated by irradiation, a signal processing section (not shown) for processing a detection result, and a positioning means 4 for holding and positioning the wafer 6. The positioning means 4 has the wafer 6 to be measured, and positions a detection region 8 by the detecting means 3, by moving the wafer 6, to a position avoiding a scattered light generating region 10 where the X-ray beam 7 is made to come to the outer peripheral surface of the wafer 6 to generate scattered light. COPYRIGHT: (C)2009,JPO&INPIT</description><language>eng</language><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; TESTING</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090409&DB=EPODOC&CC=JP&NR=2009075018A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090409&DB=EPODOC&CC=JP&NR=2009075018A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MURAKAMI HIROYOSHI</creatorcontrib><creatorcontrib>NOGUCHI SACHIKO</creatorcontrib><title>FLUORESCENT X-RAY ANALYSIS APPARATUS, AND FLUORESCENT X-RAY ANALYSIS METHOD</title><description>PROBLEM TO BE SOLVED: To provide a fluorescent X-ray analysis apparatus and fluorescent X-ray analysis method capable of performing sensitive measurement on a wafer surface, especially near the outer periphery of the wafer surface. SOLUTION: This fluorescent X-ray analysis apparatus 1 comprises an X-ray beam irradiating means 2 for irradiating the wafer 6 to be measured with an X-ray beam substantially horizontally, a detecting means 3 for detecting fluorescent X-rays generated by irradiation, a signal processing section (not shown) for processing a detection result, and a positioning means 4 for holding and positioning the wafer 6. The positioning means 4 has the wafer 6 to be measured, and positions a detection region 8 by the detecting means 3, by moving the wafer 6, to a position avoiding a scattered light generating region 10 where the X-ray beam 7 is made to come to the outer peripheral surface of the wafer 6 to generate scattered light. COPYRIGHT: (C)2009,JPO&INPIT</description><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPB28wn1D3INdnb1C1GI0A1yjFRw9HP0iQz2DFZwDAhwDHIMCQ3WAYq5KOBR6esa4uHvwsPAmpaYU5zKC6W5GZTcXEOcPXRTC_LjU4sLEpNT81JL4r0CjAwMLA3MTQ0MLRyNiVIEAAY4LlU</recordid><startdate>20090409</startdate><enddate>20090409</enddate><creator>MURAKAMI HIROYOSHI</creator><creator>NOGUCHI SACHIKO</creator><scope>EVB</scope></search><sort><creationdate>20090409</creationdate><title>FLUORESCENT X-RAY ANALYSIS APPARATUS, AND FLUORESCENT X-RAY ANALYSIS METHOD</title><author>MURAKAMI HIROYOSHI ; NOGUCHI SACHIKO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2009075018A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>MURAKAMI HIROYOSHI</creatorcontrib><creatorcontrib>NOGUCHI SACHIKO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MURAKAMI HIROYOSHI</au><au>NOGUCHI SACHIKO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FLUORESCENT X-RAY ANALYSIS APPARATUS, AND FLUORESCENT X-RAY ANALYSIS METHOD</title><date>2009-04-09</date><risdate>2009</risdate><abstract>PROBLEM TO BE SOLVED: To provide a fluorescent X-ray analysis apparatus and fluorescent X-ray analysis method capable of performing sensitive measurement on a wafer surface, especially near the outer periphery of the wafer surface. SOLUTION: This fluorescent X-ray analysis apparatus 1 comprises an X-ray beam irradiating means 2 for irradiating the wafer 6 to be measured with an X-ray beam substantially horizontally, a detecting means 3 for detecting fluorescent X-rays generated by irradiation, a signal processing section (not shown) for processing a detection result, and a positioning means 4 for holding and positioning the wafer 6. The positioning means 4 has the wafer 6 to be measured, and positions a detection region 8 by the detecting means 3, by moving the wafer 6, to a position avoiding a scattered light generating region 10 where the X-ray beam 7 is made to come to the outer peripheral surface of the wafer 6 to generate scattered light. COPYRIGHT: (C)2009,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_JP2009075018A |
source | esp@cenet |
subjects | INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING |
title | FLUORESCENT X-RAY ANALYSIS APPARATUS, AND FLUORESCENT X-RAY ANALYSIS METHOD |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T15%3A18%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MURAKAMI%20HIROYOSHI&rft.date=2009-04-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2009075018A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |