SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To more simply manufacture a semiconductor device which generates different stress in MIS (metal-insulator semiconductor) transistors having different conduction types. SOLUTION: A stress distortion generating film 27 is formed on the n-type transistor region A of a semiconductor substrate 11 so as to cover a side wall 24a and an n-type gate electrode 16. Thereafter, the semiconductor substrate 11 is heated whereby the stress distortion is given to the active region 11a of the n-type transistor region A by the stress distortion generating film 27. The upper part of the active region 11b is then etched by using the stress distortion generating film 27 as a mask in the n-type transistor region A and using the p-type gate electrode 17 as well as the side wall 24b as the masks in the p-type transistor region B whereby a recess unit 14a is formed on the outside part of the side wall 24b in the active region 11b. Thereafter, a semiconductor layer 28A consisting of silicon germanium is formed on the already formed recess unit 14a. COPYRIGHT: (C)2009,JPO&INPIT