LONG CHANNEL TRENCH-GATED POWER MOSFET HAVING FULLY DEPLETED BODY REGION

LONG CHANNEL TRENCH-GATED POWER MOSFET HAVING FULLY DEPLETED BODY REGION

PROBLEM TO BE SOLVED: To provide a trench type MOSFET which provides a greater cell packing density and lower on-resistance while maintaining acceptable levels of leakage current when the MOSFET a is in an off-state. SOLUTION: In a trench-gated power MOSFET, a body region 107 is formed within a mesa...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CHANG MIKE F, WILLIAMS RICHARD K, GRABOWSKI WAYNE, FLOYD BRIAN H, DARWISH MOHAMED
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator CHANG MIKE F
WILLIAMS RICHARD K
GRABOWSKI WAYNE
FLOYD BRIAN H
DARWISH MOHAMED
description PROBLEM TO BE SOLVED: To provide a trench type MOSFET which provides a greater cell packing density and lower on-resistance while maintaining acceptable levels of leakage current when the MOSFET a is in an off-state. SOLUTION: In a trench-gated power MOSFET, a body region 107 is formed within a mesa between adjacent trenches, the body region 107 having doping concentration established such that the body region 107 is not fully depleted at drain voltage. The width of the mesa and the doping concentration of the body region 107 and a gate 103 doped with a material of the same conductivity type as that of the body region are established such that the body region is fully depleted by the combined effects of source-body and drain-body junctions and the gate. As a result, the conventional source-body short can be eliminated, providing a greater cell packing density and lower on-resistance while maintaining the acceptable levels of leakage current when the MOSFET is in the off-state. COPYRIGHT: (C)2009,JPO&INPIT
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2009060136A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2009060136A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2009060136A3</originalsourceid><addsrcrecordid>eNrjZPDw8fdzV3D2cPTzc_VRCAly9XP20HV3DHF1UQjwD3cNUvD1D3ZzDVHwcAzzBCp0C_XxiVRwcQ3wcQUpcfJ3iVQIcnX39PfjYWBNS8wpTuWF0twMSkB9QMNSC_LjU4sLEpNT81JL4r0CjAwMLA3MDAyNzRyNiVIEAEbbLRU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>LONG CHANNEL TRENCH-GATED POWER MOSFET HAVING FULLY DEPLETED BODY REGION</title><source>esp@cenet</source><creator>CHANG MIKE F ; WILLIAMS RICHARD K ; GRABOWSKI WAYNE ; FLOYD BRIAN H ; DARWISH MOHAMED</creator><creatorcontrib>CHANG MIKE F ; WILLIAMS RICHARD K ; GRABOWSKI WAYNE ; FLOYD BRIAN H ; DARWISH MOHAMED</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a trench type MOSFET which provides a greater cell packing density and lower on-resistance while maintaining acceptable levels of leakage current when the MOSFET a is in an off-state. SOLUTION: In a trench-gated power MOSFET, a body region 107 is formed within a mesa between adjacent trenches, the body region 107 having doping concentration established such that the body region 107 is not fully depleted at drain voltage. The width of the mesa and the doping concentration of the body region 107 and a gate 103 doped with a material of the same conductivity type as that of the body region are established such that the body region is fully depleted by the combined effects of source-body and drain-body junctions and the gate. As a result, the conventional source-body short can be eliminated, providing a greater cell packing density and lower on-resistance while maintaining the acceptable levels of leakage current when the MOSFET is in the off-state. COPYRIGHT: (C)2009,JPO&amp;INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20090319&amp;DB=EPODOC&amp;CC=JP&amp;NR=2009060136A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20090319&amp;DB=EPODOC&amp;CC=JP&amp;NR=2009060136A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHANG MIKE F</creatorcontrib><creatorcontrib>WILLIAMS RICHARD K</creatorcontrib><creatorcontrib>GRABOWSKI WAYNE</creatorcontrib><creatorcontrib>FLOYD BRIAN H</creatorcontrib><creatorcontrib>DARWISH MOHAMED</creatorcontrib><title>LONG CHANNEL TRENCH-GATED POWER MOSFET HAVING FULLY DEPLETED BODY REGION</title><description>PROBLEM TO BE SOLVED: To provide a trench type MOSFET which provides a greater cell packing density and lower on-resistance while maintaining acceptable levels of leakage current when the MOSFET a is in an off-state. SOLUTION: In a trench-gated power MOSFET, a body region 107 is formed within a mesa between adjacent trenches, the body region 107 having doping concentration established such that the body region 107 is not fully depleted at drain voltage. The width of the mesa and the doping concentration of the body region 107 and a gate 103 doped with a material of the same conductivity type as that of the body region are established such that the body region is fully depleted by the combined effects of source-body and drain-body junctions and the gate. As a result, the conventional source-body short can be eliminated, providing a greater cell packing density and lower on-resistance while maintaining the acceptable levels of leakage current when the MOSFET is in the off-state. COPYRIGHT: (C)2009,JPO&amp;INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPDw8fdzV3D2cPTzc_VRCAly9XP20HV3DHF1UQjwD3cNUvD1D3ZzDVHwcAzzBCp0C_XxiVRwcQ3wcQUpcfJ3iVQIcnX39PfjYWBNS8wpTuWF0twMSkB9QMNSC_LjU4sLEpNT81JL4r0CjAwMLA3MDAyNzRyNiVIEAEbbLRU</recordid><startdate>20090319</startdate><enddate>20090319</enddate><creator>CHANG MIKE F</creator><creator>WILLIAMS RICHARD K</creator><creator>GRABOWSKI WAYNE</creator><creator>FLOYD BRIAN H</creator><creator>DARWISH MOHAMED</creator><scope>EVB</scope></search><sort><creationdate>20090319</creationdate><title>LONG CHANNEL TRENCH-GATED POWER MOSFET HAVING FULLY DEPLETED BODY REGION</title><author>CHANG MIKE F ; WILLIAMS RICHARD K ; GRABOWSKI WAYNE ; FLOYD BRIAN H ; DARWISH MOHAMED</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2009060136A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHANG MIKE F</creatorcontrib><creatorcontrib>WILLIAMS RICHARD K</creatorcontrib><creatorcontrib>GRABOWSKI WAYNE</creatorcontrib><creatorcontrib>FLOYD BRIAN H</creatorcontrib><creatorcontrib>DARWISH MOHAMED</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHANG MIKE F</au><au>WILLIAMS RICHARD K</au><au>GRABOWSKI WAYNE</au><au>FLOYD BRIAN H</au><au>DARWISH MOHAMED</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LONG CHANNEL TRENCH-GATED POWER MOSFET HAVING FULLY DEPLETED BODY REGION</title><date>2009-03-19</date><risdate>2009</risdate><abstract>PROBLEM TO BE SOLVED: To provide a trench type MOSFET which provides a greater cell packing density and lower on-resistance while maintaining acceptable levels of leakage current when the MOSFET a is in an off-state. SOLUTION: In a trench-gated power MOSFET, a body region 107 is formed within a mesa between adjacent trenches, the body region 107 having doping concentration established such that the body region 107 is not fully depleted at drain voltage. The width of the mesa and the doping concentration of the body region 107 and a gate 103 doped with a material of the same conductivity type as that of the body region are established such that the body region is fully depleted by the combined effects of source-body and drain-body junctions and the gate. As a result, the conventional source-body short can be eliminated, providing a greater cell packing density and lower on-resistance while maintaining the acceptable levels of leakage current when the MOSFET is in the off-state. COPYRIGHT: (C)2009,JPO&amp;INPIT</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JP2009060136A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title LONG CHANNEL TRENCH-GATED POWER MOSFET HAVING FULLY DEPLETED BODY REGION
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T04%3A04%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHANG%20MIKE%20F&rft.date=2009-03-19&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2009060136A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true