SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a method of manufacturing a solid-state imaging device by which a downward convex shape of an in-layer lens can be formed without using a heating reflow. SOLUTION: An insulating film 30 is formed covering a light shield film 17, and its top surface is flattened. A re...

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description PROBLEM TO BE SOLVED: To provide a method of manufacturing a solid-state imaging device by which a downward convex shape of an in-layer lens can be formed without using a heating reflow. SOLUTION: An insulating film 30 is formed covering a light shield film 17, and its top surface is flattened. A resist mask having an opening whose diameter is smaller than a photodetection unit 30 is formed right above the photodetection unit 30 on the flattened surface 30a of the insulating film 30, and anisotropic etching is carried out to form a recessed portion 30b in the insulating film 30. The resist mask is removed, and a resist film 32 having a curved surface 32a in an upward convex shape is formed on the flattened surface 30a of the insulating film 30 so that an end of the flattened surface connects with an end of the recessed portion 30b (Fig. 5(A)). The insulating film 30 and resist film 32 are anisotropically etched at a nearly constant rate in a direction nearly perpendicular to a semiconductor substrate 10 to transfer the shape of the resist film 32 to the insulating film 30 and also to leave the shape of the recessed portion 30b on the photodetection unit 30 (Fig. 5(B)). A high-refractive-index film having a higher refractive index than the insulating film 30 is laminated to form the in-layer lens. COPYRIGHT: (C)2009,JPO&INPIT
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SOLUTION: An insulating film 30 is formed covering a light shield film 17, and its top surface is flattened. A resist mask having an opening whose diameter is smaller than a photodetection unit 30 is formed right above the photodetection unit 30 on the flattened surface 30a of the insulating film 30, and anisotropic etching is carried out to form a recessed portion 30b in the insulating film 30. The resist mask is removed, and a resist film 32 having a curved surface 32a in an upward convex shape is formed on the flattened surface 30a of the insulating film 30 so that an end of the flattened surface connects with an end of the recessed portion 30b (Fig. 5(A)). The insulating film 30 and resist film 32 are anisotropically etched at a nearly constant rate in a direction nearly perpendicular to a semiconductor substrate 10 to transfer the shape of the resist film 32 to the insulating film 30 and also to leave the shape of the recessed portion 30b on the photodetection unit 30 (Fig. 5(B)). A high-refractive-index film having a higher refractive index than the insulating film 30 is laminated to form the in-layer lens. 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The insulating film 30 and resist film 32 are anisotropically etched at a nearly constant rate in a direction nearly perpendicular to a semiconductor substrate 10 to transfer the shape of the resist film 32 to the insulating film 30 and also to leave the shape of the recessed portion 30b on the photodetection unit 30 (Fig. 5(B)). A high-refractive-index film having a higher refractive index than the insulating film 30 is laminated to form the in-layer lens. 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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
title SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF
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