CCD SOLID-STATE IMAGING ELEMENT, AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a CCD solid-state imaging element achieving high speed vertical charge transfer, and to provide a manufacturing method thereof. SOLUTION: The CCD solid-state imaging element includes a plurality of pixels formed on a semiconductor substrate in a two-dimensional array, a vertical charge transfer path formed for each pixel column along the pixel column, a plurality of bus line wiring 7-i laminated on vertical transfer electrodes Vi constituting vertical charge transfer paths with an insulating layer interposed and supply vertical transfer pulses to the vertical transfer electrodes, and a contact 8 connecting each of the bus line wiring 7-i to a corresponding vertical transfer electrode Vi, wherein ends of all the vertical transfer electrodes Vi on sides of the bus line wiring 7-i are extended to positions where they cross all the bus line wiring 7-i, and a vertical transfer electrode is cut 12-i between the place where the contact 8 is formed and a bus line wiring 7-i which is adjacent to the region where the pixels are formed on the opposite side. COPYRIGHT: (C)2009,JPO&INPIT