SILICON SINGLE CRYSTAL GROWING METHOD AND ITS APPARATUS

PROBLEM TO BE SOLVED: To simply suppress solidification of silicon easily generated from the inner wall of a quartz crucible in pull-up growing of a silicon single crystal by MCZ method using a cusp magnetic field. SOLUTION: A silicon melt 12 is formed in a quartz crucible 13 with a main chamber int...

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1. Verfasser:	HISAICHI TOSHIO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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creator	HISAICHI TOSHIO
description	PROBLEM TO BE SOLVED: To simply suppress solidification of silicon easily generated from the inner wall of a quartz crucible in pull-up growing of a silicon single crystal by MCZ method using a cusp magnetic field. SOLUTION: A silicon melt 12 is formed in a quartz crucible 13 with a main chamber interior 11 of a silicon single crystal growing apparatus 10 put in an inert gas atmosphere. A cusp magnetic field is generated by electromagnetic coils 20, 21 and the magnetic field is applied perpendicularly to the side wall surface and the bottom surface of the quartz crucible 13, while after a seed crystal 26 attached to a seed chuck 27 is contacted with the silicon melt 12, a pull-up shaft 25 is pulled up at a prescribed speed. The quartz crucible 13 is rotated in varied speeds by adding a periodical pulsating increase/decrease to a standard rotation speed by a rotation/up and down-driving device 23 to rotate and up/down-drive a support shaft 22. A driving control section 24 controls the speed-varied rotation operation of the rotation/up and down-driving device 23. COPYRIGHT: (C)2009,JPO&INPIT
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2009057232A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2009057232A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2009057232A3</originalsourceid><addsrcrecordid>eNrjZDAP9vTxdPb3Uwj29HP3cVVwDooMDnH0UXAP8g8Hiij4uoZ4-LsoOPq5KHiGBCs4BgQ4BjmGhAbzMLCmJeYUp_JCaW4GJTfXEGcP3dSC_PjU4oLE5NS81JJ4rwAjAwNLA1NzI2MjR2OiFAEAlhUotQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SILICON SINGLE CRYSTAL GROWING METHOD AND ITS APPARATUS</title><source>esp@cenet</source><creator>HISAICHI TOSHIO</creator><creatorcontrib>HISAICHI TOSHIO</creatorcontrib><description>PROBLEM TO BE SOLVED: To simply suppress solidification of silicon easily generated from the inner wall of a quartz crucible in pull-up growing of a silicon single crystal by MCZ method using a cusp magnetic field. SOLUTION: A silicon melt 12 is formed in a quartz crucible 13 with a main chamber interior 11 of a silicon single crystal growing apparatus 10 put in an inert gas atmosphere. A cusp magnetic field is generated by electromagnetic coils 20, 21 and the magnetic field is applied perpendicularly to the side wall surface and the bottom surface of the quartz crucible 13, while after a seed crystal 26 attached to a seed chuck 27 is contacted with the silicon melt 12, a pull-up shaft 25 is pulled up at a prescribed speed. The quartz crucible 13 is rotated in varied speeds by adding a periodical pulsating increase/decrease to a standard rotation speed by a rotation/up and down-driving device 23 to rotate and up/down-drive a support shaft 22. A driving control section 24 controls the speed-varied rotation operation of the rotation/up and down-driving device 23. COPYRIGHT: (C)2009,JPO&INPIT</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090319&DB=EPODOC&CC=JP&NR=2009057232A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090319&DB=EPODOC&CC=JP&NR=2009057232A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HISAICHI TOSHIO</creatorcontrib><title>SILICON SINGLE CRYSTAL GROWING METHOD AND ITS APPARATUS</title><description>PROBLEM TO BE SOLVED: To simply suppress solidification of silicon easily generated from the inner wall of a quartz crucible in pull-up growing of a silicon single crystal by MCZ method using a cusp magnetic field. SOLUTION: A silicon melt 12 is formed in a quartz crucible 13 with a main chamber interior 11 of a silicon single crystal growing apparatus 10 put in an inert gas atmosphere. A cusp magnetic field is generated by electromagnetic coils 20, 21 and the magnetic field is applied perpendicularly to the side wall surface and the bottom surface of the quartz crucible 13, while after a seed crystal 26 attached to a seed chuck 27 is contacted with the silicon melt 12, a pull-up shaft 25 is pulled up at a prescribed speed. The quartz crucible 13 is rotated in varied speeds by adding a periodical pulsating increase/decrease to a standard rotation speed by a rotation/up and down-driving device 23 to rotate and up/down-drive a support shaft 22. A driving control section 24 controls the speed-varied rotation operation of the rotation/up and down-driving device 23. COPYRIGHT: (C)2009,JPO&INPIT</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAP9vTxdPb3Uwj29HP3cVVwDooMDnH0UXAP8g8Hiij4uoZ4-LsoOPq5KHiGBCs4BgQ4BjmGhAbzMLCmJeYUp_JCaW4GJTfXEGcP3dSC_PjU4oLE5NS81JJ4rwAjAwNLA1NzI2MjR2OiFAEAlhUotQ</recordid><startdate>20090319</startdate><enddate>20090319</enddate><creator>HISAICHI TOSHIO</creator><scope>EVB</scope></search><sort><creationdate>20090319</creationdate><title>SILICON SINGLE CRYSTAL GROWING METHOD AND ITS APPARATUS</title><author>HISAICHI TOSHIO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2009057232A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>HISAICHI TOSHIO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HISAICHI TOSHIO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SILICON SINGLE CRYSTAL GROWING METHOD AND ITS APPARATUS</title><date>2009-03-19</date><risdate>2009</risdate><abstract>PROBLEM TO BE SOLVED: To simply suppress solidification of silicon easily generated from the inner wall of a quartz crucible in pull-up growing of a silicon single crystal by MCZ method using a cusp magnetic field. SOLUTION: A silicon melt 12 is formed in a quartz crucible 13 with a main chamber interior 11 of a silicon single crystal growing apparatus 10 put in an inert gas atmosphere. A cusp magnetic field is generated by electromagnetic coils 20, 21 and the magnetic field is applied perpendicularly to the side wall surface and the bottom surface of the quartz crucible 13, while after a seed crystal 26 attached to a seed chuck 27 is contacted with the silicon melt 12, a pull-up shaft 25 is pulled up at a prescribed speed. The quartz crucible 13 is rotated in varied speeds by adding a periodical pulsating increase/decrease to a standard rotation speed by a rotation/up and down-driving device 23 to rotate and up/down-drive a support shaft 22. A driving control section 24 controls the speed-varied rotation operation of the rotation/up and down-driving device 23. COPYRIGHT: (C)2009,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record>
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subjects	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title	SILICON SINGLE CRYSTAL GROWING METHOD AND ITS APPARATUS
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