REFLECTION TYPE EXPOSING METHOD
PROBLEM TO BE SOLVED: To provide a reflection type exposing method capable of securing the quality of a pattern transferred to a wafer while mitigating allowable specifications of a reflection type mask varying in size error. SOLUTION: The reflection type exposing method includes: a step of selectin...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | IRIKITA NOBUYUKI |
| description | PROBLEM TO BE SOLVED: To provide a reflection type exposing method capable of securing the quality of a pattern transferred to a wafer while mitigating allowable specifications of a reflection type mask varying in size error. SOLUTION: The reflection type exposing method includes: a step of selecting a specified pattern, for example, a pattern of the smallest size for a trench mask or hole mask provided to the reflection type mask; and a step of measuring the mask size associated with the pattern. Further, the reflection type exposing method includes: a step of finding a numerical aperture of an illumination optical system so that an influence of a mask size error obtained from variance in measured mask size on a wafer size reaches a predetermined value; and a step of varying coherency of the illumination optical system adaptively to the obtained numerical aperture of the lighting optical system. COPYRIGHT: (C)2009,JPO&INPIT |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2009026836A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2009026836A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2009026836A3</originalsourceid><addsrcrecordid>eNrjZJAPcnXzcXUO8fT3UwiJDHBVcI0I8A_29HNX8HUN8fB34WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgYGlgZGZhbGZo7GRCkCACahIj0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>REFLECTION TYPE EXPOSING METHOD</title><source>esp@cenet</source><creator>IRIKITA NOBUYUKI</creator><creatorcontrib>IRIKITA NOBUYUKI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a reflection type exposing method capable of securing the quality of a pattern transferred to a wafer while mitigating allowable specifications of a reflection type mask varying in size error. SOLUTION: The reflection type exposing method includes: a step of selecting a specified pattern, for example, a pattern of the smallest size for a trench mask or hole mask provided to the reflection type mask; and a step of measuring the mask size associated with the pattern. Further, the reflection type exposing method includes: a step of finding a numerical aperture of an illumination optical system so that an influence of a mask size error obtained from variance in measured mask size on a wafer size reaches a predetermined value; and a step of varying coherency of the illumination optical system adaptively to the obtained numerical aperture of the lighting optical system. COPYRIGHT: (C)2009,JPO&INPIT</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090205&DB=EPODOC&CC=JP&NR=2009026836A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090205&DB=EPODOC&CC=JP&NR=2009026836A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IRIKITA NOBUYUKI</creatorcontrib><title>REFLECTION TYPE EXPOSING METHOD</title><description>PROBLEM TO BE SOLVED: To provide a reflection type exposing method capable of securing the quality of a pattern transferred to a wafer while mitigating allowable specifications of a reflection type mask varying in size error. SOLUTION: The reflection type exposing method includes: a step of selecting a specified pattern, for example, a pattern of the smallest size for a trench mask or hole mask provided to the reflection type mask; and a step of measuring the mask size associated with the pattern. Further, the reflection type exposing method includes: a step of finding a numerical aperture of an illumination optical system so that an influence of a mask size error obtained from variance in measured mask size on a wafer size reaches a predetermined value; and a step of varying coherency of the illumination optical system adaptively to the obtained numerical aperture of the lighting optical system. COPYRIGHT: (C)2009,JPO&INPIT</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAPcnXzcXUO8fT3UwiJDHBVcI0I8A_29HNX8HUN8fB34WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgYGlgZGZhbGZo7GRCkCACahIj0</recordid><startdate>20090205</startdate><enddate>20090205</enddate><creator>IRIKITA NOBUYUKI</creator><scope>EVB</scope></search><sort><creationdate>20090205</creationdate><title>REFLECTION TYPE EXPOSING METHOD</title><author>IRIKITA NOBUYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2009026836A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>IRIKITA NOBUYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>IRIKITA NOBUYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>REFLECTION TYPE EXPOSING METHOD</title><date>2009-02-05</date><risdate>2009</risdate><abstract>PROBLEM TO BE SOLVED: To provide a reflection type exposing method capable of securing the quality of a pattern transferred to a wafer while mitigating allowable specifications of a reflection type mask varying in size error. SOLUTION: The reflection type exposing method includes: a step of selecting a specified pattern, for example, a pattern of the smallest size for a trench mask or hole mask provided to the reflection type mask; and a step of measuring the mask size associated with the pattern. Further, the reflection type exposing method includes: a step of finding a numerical aperture of an illumination optical system so that an influence of a mask size error obtained from variance in measured mask size on a wafer size reaches a predetermined value; and a step of varying coherency of the illumination optical system adaptively to the obtained numerical aperture of the lighting optical system. COPYRIGHT: (C)2009,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JP2009026836A |
| source | esp@cenet |
| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | REFLECTION TYPE EXPOSING METHOD |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T13%3A13%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=IRIKITA%20NOBUYUKI&rft.date=2009-02-05&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2009026836A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |