MANUFACTURING METHOD OF GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR LIGHT-EMITTING DEVICE

PROBLEM TO BE SOLVED: To provide an advantageous manufacturing method for obtaining a group III-V nitride semiconductor crystal having a high-quality and large area nonpolar face. SOLUTION: In the manufacturing method of the group III nitride semiconductor crystal 200, a seed crystal S having an M f...

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Bibliographische Detailangaben
Hauptverfasser:	FUJITO TAKESHI, KIYOMI KAZUMASA
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an advantageous manufacturing method for obtaining a group III-V nitride semiconductor crystal having a high-quality and large area nonpolar face. SOLUTION: In the manufacturing method of the group III nitride semiconductor crystal 200, a seed crystal S having an M face being a nonpolar face is prepared and a growing process for growing the group III nitride semiconductor crystal 200 in a gas phase from the M face being the nonpolar face is provided, and in the growing process, the group III nitride semiconductor crystal 200 is grown so as to extend to a +C axis direction ( direction) of the seed crystal S. COPYRIGHT: (C)2009,JPO&INPIT