POLISHING LIQUID FOR CMP, AND METHOD OF POLISHING BASE USING THE SAME

PROBLEM TO BE SOLVED: To provide a polishing liquid for CMP that can achieve high planarization and can prevent dishing and erosion when an embedded wiring in a metal film is formed by CMP method, and to provide a method of polishing a base (substrate) using the same. SOLUTION: The polishing liquid for CMP contains abrasive grains, a metal oxidant, a metal oxide resolvent, a metal anti-corrosion agent, and water, and the metal anti-corrosion agent contains both a compound having an imidazole skeleton and a compound having a triazole skeleton. In the method of polishing a base wherein a conductor embedded wiring is formed in a semiconductor integrated circuit, a polishing liquid for CMP is supplied onto a polishing cloth of a polishing table, a metal to be polished and a substrate having a barrier metal film thereunder are pressed down, and the polishing table and the same are relatively moved to continuously polish the metal and the barrier metal film thereunder. COPYRIGHT: (C)2009,JPO&INPIT