DEVELOPMENT PROCESSING METHOD AND EQUIPMENT OF SUBSTRATE
PROBLEM TO BE SOLVED: To remove an antireflection film formed on an underlayer of a resist film so as not to influence the resist film, in a photolithography step of a wafer. SOLUTION: In a photolithography step of a wafer W, an antireflection film B having solubility in a developer solution is form...
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| creator | SHIZUKUISHI MOMOKO YAEGASHI HIDETAMI |
| description | PROBLEM TO BE SOLVED: To remove an antireflection film formed on an underlayer of a resist film so as not to influence the resist film, in a photolithography step of a wafer. SOLUTION: In a photolithography step of a wafer W, an antireflection film B having solubility in a developer solution is formed, and thereafter a resist film R is formed. At the time of development processing after exposure processing, a developer solution H1 is fed to the surface of the wafer W, to develop the resist film R. At the time of finishing the development of the resist film R, a developer solution H2 having lower concentration than that of the developer solution H1 is fed to the surface of the wafer W. Only the antireflection film B is dissolved and removed by feeding of this developer solution H2. COPYRIGHT: (C)2009,JPO&INPIT |
| format | Patent |
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SOLUTION: In a photolithography step of a wafer W, an antireflection film B having solubility in a developer solution is formed, and thereafter a resist film R is formed. At the time of development processing after exposure processing, a developer solution H1 is fed to the surface of the wafer W, to develop the resist film R. At the time of finishing the development of the resist film R, a developer solution H2 having lower concentration than that of the developer solution H1 is fed to the surface of the wafer W. Only the antireflection film B is dissolved and removed by feeding of this developer solution H2. 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SOLUTION: In a photolithography step of a wafer W, an antireflection film B having solubility in a developer solution is formed, and thereafter a resist film R is formed. At the time of development processing after exposure processing, a developer solution H1 is fed to the surface of the wafer W, to develop the resist film R. At the time of finishing the development of the resist film R, a developer solution H2 having lower concentration than that of the developer solution H1 is fed to the surface of the wafer W. Only the antireflection film B is dissolved and removed by feeding of this developer solution H2. COPYRIGHT: (C)2009,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | DEVELOPMENT PROCESSING METHOD AND EQUIPMENT OF SUBSTRATE |
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