SEMICONDUCTOR THIN FILM, METHOD FOR FORMING THE SAME, AND AMORPHOUS Si SOLAR BATTERY USING THE SEMICONDUCTOR THIN FILM

PROBLEM TO BE SOLVED: To obtain a semiconductor thin film having a high crystallization rate by a simple process, and to provide a method for producing a semiconductor thin film preventing the intrusion of impurities. SOLUTION: Disclosed is a method for depositing a semiconductor thin film where a d...

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Hauptverfasser:	UMETSU KAZUYUKI, RIYOU RAKU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	PROBLEM TO BE SOLVED: To obtain a semiconductor thin film having a high crystallization rate by a simple process, and to provide a method for producing a semiconductor thin film preventing the intrusion of impurities. SOLUTION: Disclosed is a method for depositing a semiconductor thin film where a discontinuous amorphous Si thin film 202 is deposited on a substrate 200, the substrate 200 with the discontinuous amorphous Si thin film 202 deposited is heat-treated at a prescribed temperature for a prescribed time, so as to deposit a discontinuous crystalline Si thin film 204 on the substrate 200, and an Si thin film 206 is deposited on the discontinuous crystalline Si thin film 204. COPYRIGHT: (C)2009,JPO&INPIT