YTTRIA SINTERED COMPACT AND MEMBER FOR PLASMA PROCESSING APPARATUS

PROBLEM TO BE SOLVED: To provide an yttria sintered compact capable of being used for a part exposed to a plasma of a plasma processing apparatus. SOLUTION: The yttria sintered compact has an average crystal diameter of not greater than 3 μm, a porosity of not greater than 1% and a flexural strength...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	ARAHORI TADAHISA, OKAMOTO KEN
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE LIME, MAGNESIA METALLURGY REFRACTORIES SLAG TREATMENT OF NATURAL STONE
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	ARAHORI TADAHISA OKAMOTO KEN
description	PROBLEM TO BE SOLVED: To provide an yttria sintered compact capable of being used for a part exposed to a plasma of a plasma processing apparatus. SOLUTION: The yttria sintered compact has an average crystal diameter of not greater than 3 μm, a porosity of not greater than 1% and a flexural strength of not less than 180 MPa. The yttria sintered compact may preferably have a surface roughness (Ra) of 0.05-5 μm. Further, the yttria sintered compact may more preferably satisfy the relationship of the following formula (1): E≤1.20×E0(1) where E and E0in the formula (1) denote etching rates (nm/min) when performing plasma processing under the same condition to yttria sintered compacts of the same material but different in surface roughness respectively, and E0denotes an etching rate (nm/min) of the yttria sintered compact having a surface roughness (Ra) of 0.05 μm. COPYRIGHT: (C)2009,JPO&INPIT
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2008260644A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2008260644A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2008260644A3</originalsourceid><addsrcrecordid>eNrjZHCKDAkJ8nRUCPb0C3ENcnVRcPb3DXB0DlFw9HNR8HX1dXINUnDzD1II8HEM9nVUCAjyd3YNBip2V3AMCHAMcgwJDeZhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBhZGZgZmJiaOxkQpAgBfriu9</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>YTTRIA SINTERED COMPACT AND MEMBER FOR PLASMA PROCESSING APPARATUS</title><source>esp@cenet</source><creator>ARAHORI TADAHISA ; OKAMOTO KEN</creator><creatorcontrib>ARAHORI TADAHISA ; OKAMOTO KEN</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide an yttria sintered compact capable of being used for a part exposed to a plasma of a plasma processing apparatus. SOLUTION: The yttria sintered compact has an average crystal diameter of not greater than 3 μm, a porosity of not greater than 1% and a flexural strength of not less than 180 MPa. The yttria sintered compact may preferably have a surface roughness (Ra) of 0.05-5 μm. Further, the yttria sintered compact may more preferably satisfy the relationship of the following formula (1): E≤1.20×E0(1) where E and E0in the formula (1) denote etching rates (nm/min) when performing plasma processing under the same condition to yttria sintered compacts of the same material but different in surface roughness respectively, and E0denotes an etching rate (nm/min) of the yttria sintered compact having a surface roughness (Ra) of 0.05 μm. COPYRIGHT: (C)2009,JPO&INPIT</description><language>eng</language><subject>ARTIFICIAL STONE ; CEMENTS ; CERAMICS ; CHEMISTRY ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; LIME, MAGNESIA ; METALLURGY ; REFRACTORIES ; SLAG ; TREATMENT OF NATURAL STONE</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20081030&DB=EPODOC&CC=JP&NR=2008260644A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20081030&DB=EPODOC&CC=JP&NR=2008260644A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ARAHORI TADAHISA</creatorcontrib><creatorcontrib>OKAMOTO KEN</creatorcontrib><title>YTTRIA SINTERED COMPACT AND MEMBER FOR PLASMA PROCESSING APPARATUS</title><description>PROBLEM TO BE SOLVED: To provide an yttria sintered compact capable of being used for a part exposed to a plasma of a plasma processing apparatus. SOLUTION: The yttria sintered compact has an average crystal diameter of not greater than 3 μm, a porosity of not greater than 1% and a flexural strength of not less than 180 MPa. The yttria sintered compact may preferably have a surface roughness (Ra) of 0.05-5 μm. Further, the yttria sintered compact may more preferably satisfy the relationship of the following formula (1): E≤1.20×E0(1) where E and E0in the formula (1) denote etching rates (nm/min) when performing plasma processing under the same condition to yttria sintered compacts of the same material but different in surface roughness respectively, and E0denotes an etching rate (nm/min) of the yttria sintered compact having a surface roughness (Ra) of 0.05 μm. COPYRIGHT: (C)2009,JPO&INPIT</description><subject>ARTIFICIAL STONE</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>REFRACTORIES</subject><subject>SLAG</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHCKDAkJ8nRUCPb0C3ENcnVRcPb3DXB0DlFw9HNR8HX1dXINUnDzD1II8HEM9nVUCAjyd3YNBip2V3AMCHAMcgwJDeZhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBhZGZgZmJiaOxkQpAgBfriu9</recordid><startdate>20081030</startdate><enddate>20081030</enddate><creator>ARAHORI TADAHISA</creator><creator>OKAMOTO KEN</creator><scope>EVB</scope></search><sort><creationdate>20081030</creationdate><title>YTTRIA SINTERED COMPACT AND MEMBER FOR PLASMA PROCESSING APPARATUS</title><author>ARAHORI TADAHISA ; OKAMOTO KEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2008260644A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>ARTIFICIAL STONE</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMISTRY</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>REFRACTORIES</topic><topic>SLAG</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>ARAHORI TADAHISA</creatorcontrib><creatorcontrib>OKAMOTO KEN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ARAHORI TADAHISA</au><au>OKAMOTO KEN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>YTTRIA SINTERED COMPACT AND MEMBER FOR PLASMA PROCESSING APPARATUS</title><date>2008-10-30</date><risdate>2008</risdate><abstract>PROBLEM TO BE SOLVED: To provide an yttria sintered compact capable of being used for a part exposed to a plasma of a plasma processing apparatus. SOLUTION: The yttria sintered compact has an average crystal diameter of not greater than 3 μm, a porosity of not greater than 1% and a flexural strength of not less than 180 MPa. The yttria sintered compact may preferably have a surface roughness (Ra) of 0.05-5 μm. Further, the yttria sintered compact may more preferably satisfy the relationship of the following formula (1): E≤1.20×E0(1) where E and E0in the formula (1) denote etching rates (nm/min) when performing plasma processing under the same condition to yttria sintered compacts of the same material but different in surface roughness respectively, and E0denotes an etching rate (nm/min) of the yttria sintered compact having a surface roughness (Ra) of 0.05 μm. COPYRIGHT: (C)2009,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng
recordid	cdi_epo_espacenet_JP2008260644A
source	esp@cenet
subjects	ARTIFICIAL STONE CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE LIME, MAGNESIA METALLURGY REFRACTORIES SLAG TREATMENT OF NATURAL STONE
title	YTTRIA SINTERED COMPACT AND MEMBER FOR PLASMA PROCESSING APPARATUS
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T08%3A46%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ARAHORI%20TADAHISA&rft.date=2008-10-30&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2008260644A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true