SUBSTRATE PROCESSING DEVICE
PROBLEM TO BE SOLVED: To execute a dry cleaning method while preventing decline of an operating rate. SOLUTION: A processing furnace 30 of a CVD device comprises nozzles 51, 56 for supplying a film forming gas or a cleaning gas into a processing chamber 36, film forming gas supply lines 52, 57 conne...
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| creator | KUWATA YOSUKE |
| description | PROBLEM TO BE SOLVED: To execute a dry cleaning method while preventing decline of an operating rate. SOLUTION: A processing furnace 30 of a CVD device comprises nozzles 51, 56 for supplying a film forming gas or a cleaning gas into a processing chamber 36, film forming gas supply lines 52, 57 connected with the nozzles 51, 56 via switching valves 53, 58 for supplying the film forming gas, cleaning gas supply lines 62, 66 connected with the nozzles 51, 56 via switching valves 63, 67 for supplying the cleaning gas, and a heater 72 for heating the nozzle 51 and the film forming gas supply line 52. A heater 71 is disposed in an exhaust pipe 40. At the time of forming a film, the temperature of the heater 72 is raised to and maintained at a predetermined temperature. At the time of dry cleaning, the temperature of the heaters 71, 72 is controlled to an etching temperature or lower. COPYRIGHT: (C)2008,JPO&INPIT |
| format | Patent |
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SOLUTION: A processing furnace 30 of a CVD device comprises nozzles 51, 56 for supplying a film forming gas or a cleaning gas into a processing chamber 36, film forming gas supply lines 52, 57 connected with the nozzles 51, 56 via switching valves 53, 58 for supplying the film forming gas, cleaning gas supply lines 62, 66 connected with the nozzles 51, 56 via switching valves 63, 67 for supplying the cleaning gas, and a heater 72 for heating the nozzle 51 and the film forming gas supply line 52. A heater 71 is disposed in an exhaust pipe 40. At the time of forming a film, the temperature of the heater 72 is raised to and maintained at a predetermined temperature. At the time of dry cleaning, the temperature of the heaters 71, 72 is controlled to an etching temperature or lower. 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SOLUTION: A processing furnace 30 of a CVD device comprises nozzles 51, 56 for supplying a film forming gas or a cleaning gas into a processing chamber 36, film forming gas supply lines 52, 57 connected with the nozzles 51, 56 via switching valves 53, 58 for supplying the film forming gas, cleaning gas supply lines 62, 66 connected with the nozzles 51, 56 via switching valves 63, 67 for supplying the cleaning gas, and a heater 72 for heating the nozzle 51 and the film forming gas supply line 52. A heater 71 is disposed in an exhaust pipe 40. At the time of forming a film, the temperature of the heater 72 is raised to and maintained at a predetermined temperature. At the time of dry cleaning, the temperature of the heaters 71, 72 is controlled to an etching temperature or lower. COPYRIGHT: (C)2008,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SUBSTRATE PROCESSING DEVICE |
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