TREATMENT METHOD AND STORAGE MEDIUM

PROBLEM TO BE SOLVED: To provide a treatment method which maintains a fine process characteristic and simultaneously can perform a serialization process at higher throughput than that of a conventional one. SOLUTION: In this treatment method, after a treatment board is carried into a treatment chamb...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ASAKO RYUICHI, KUBOTA KAZUHIRO, HOSHI NAOTADA, CHIBA YUUKI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator ASAKO RYUICHI
KUBOTA KAZUHIRO
HOSHI NAOTADA
CHIBA YUUKI
description PROBLEM TO BE SOLVED: To provide a treatment method which maintains a fine process characteristic and simultaneously can perform a serialization process at higher throughput than that of a conventional one. SOLUTION: In this treatment method, after a treatment board is carried into a treatment chamber, gas having a coupling with Si and CH3is introduced into the treatment chamber, and the serialization process is performed to the treatment board. The gas having the coupling with Si and CH3is supplied into the treatment chamber to raise the pressure of the treatment chamber, and while the pressure of the treatment chamber is lowered after reaching given pressure down to carry-out pressure, the pressure of the treatment chamber and a supply time period in supplying the gas having the coupling with Si and CH3are set to a range in which a predetermined serialization process can be performed. COPYRIGHT: (C)2008,JPO&INPIT
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2008198848A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2008198848A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2008198848A3</originalsourceid><addsrcrecordid>eNrjZFAOCXJ1DPF19QtR8HUN8fB3UXD0c1EIDvEPcnR3BQq5eIb68jCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwMDC0NLCwsTC0djohQBAJ4EIzw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>TREATMENT METHOD AND STORAGE MEDIUM</title><source>esp@cenet</source><creator>ASAKO RYUICHI ; KUBOTA KAZUHIRO ; HOSHI NAOTADA ; CHIBA YUUKI</creator><creatorcontrib>ASAKO RYUICHI ; KUBOTA KAZUHIRO ; HOSHI NAOTADA ; CHIBA YUUKI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a treatment method which maintains a fine process characteristic and simultaneously can perform a serialization process at higher throughput than that of a conventional one. SOLUTION: In this treatment method, after a treatment board is carried into a treatment chamber, gas having a coupling with Si and CH3is introduced into the treatment chamber, and the serialization process is performed to the treatment board. The gas having the coupling with Si and CH3is supplied into the treatment chamber to raise the pressure of the treatment chamber, and while the pressure of the treatment chamber is lowered after reaching given pressure down to carry-out pressure, the pressure of the treatment chamber and a supply time period in supplying the gas having the coupling with Si and CH3are set to a range in which a predetermined serialization process can be performed. COPYRIGHT: (C)2008,JPO&amp;INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20080828&amp;DB=EPODOC&amp;CC=JP&amp;NR=2008198848A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20080828&amp;DB=EPODOC&amp;CC=JP&amp;NR=2008198848A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ASAKO RYUICHI</creatorcontrib><creatorcontrib>KUBOTA KAZUHIRO</creatorcontrib><creatorcontrib>HOSHI NAOTADA</creatorcontrib><creatorcontrib>CHIBA YUUKI</creatorcontrib><title>TREATMENT METHOD AND STORAGE MEDIUM</title><description>PROBLEM TO BE SOLVED: To provide a treatment method which maintains a fine process characteristic and simultaneously can perform a serialization process at higher throughput than that of a conventional one. SOLUTION: In this treatment method, after a treatment board is carried into a treatment chamber, gas having a coupling with Si and CH3is introduced into the treatment chamber, and the serialization process is performed to the treatment board. The gas having the coupling with Si and CH3is supplied into the treatment chamber to raise the pressure of the treatment chamber, and while the pressure of the treatment chamber is lowered after reaching given pressure down to carry-out pressure, the pressure of the treatment chamber and a supply time period in supplying the gas having the coupling with Si and CH3are set to a range in which a predetermined serialization process can be performed. COPYRIGHT: (C)2008,JPO&amp;INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAOCXJ1DPF19QtR8HUN8fB3UXD0c1EIDvEPcnR3BQq5eIb68jCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwMDC0NLCwsTC0djohQBAJ4EIzw</recordid><startdate>20080828</startdate><enddate>20080828</enddate><creator>ASAKO RYUICHI</creator><creator>KUBOTA KAZUHIRO</creator><creator>HOSHI NAOTADA</creator><creator>CHIBA YUUKI</creator><scope>EVB</scope></search><sort><creationdate>20080828</creationdate><title>TREATMENT METHOD AND STORAGE MEDIUM</title><author>ASAKO RYUICHI ; KUBOTA KAZUHIRO ; HOSHI NAOTADA ; CHIBA YUUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2008198848A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ASAKO RYUICHI</creatorcontrib><creatorcontrib>KUBOTA KAZUHIRO</creatorcontrib><creatorcontrib>HOSHI NAOTADA</creatorcontrib><creatorcontrib>CHIBA YUUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ASAKO RYUICHI</au><au>KUBOTA KAZUHIRO</au><au>HOSHI NAOTADA</au><au>CHIBA YUUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TREATMENT METHOD AND STORAGE MEDIUM</title><date>2008-08-28</date><risdate>2008</risdate><abstract>PROBLEM TO BE SOLVED: To provide a treatment method which maintains a fine process characteristic and simultaneously can perform a serialization process at higher throughput than that of a conventional one. SOLUTION: In this treatment method, after a treatment board is carried into a treatment chamber, gas having a coupling with Si and CH3is introduced into the treatment chamber, and the serialization process is performed to the treatment board. The gas having the coupling with Si and CH3is supplied into the treatment chamber to raise the pressure of the treatment chamber, and while the pressure of the treatment chamber is lowered after reaching given pressure down to carry-out pressure, the pressure of the treatment chamber and a supply time period in supplying the gas having the coupling with Si and CH3are set to a range in which a predetermined serialization process can be performed. COPYRIGHT: (C)2008,JPO&amp;INPIT</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JP2008198848A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title TREATMENT METHOD AND STORAGE MEDIUM
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T06%3A37%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ASAKO%20RYUICHI&rft.date=2008-08-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2008198848A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true